2010
DOI: 10.1016/j.cap.2009.08.010
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Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

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Cited by 14 publications
(2 citation statements)
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“…In recent years, several groups have addressed the above challenges, resulting in the generation of higher power Gunn diodes [124,125], frequency multiplier units based on SBDs, impact ionization avalanche transit-time devices (IMPATTs) [126,127], tunneling transit time diodes (TUNNETT) [128][129][130], and resonant tunneling diodes (RTDs) [131]. For example, InP Gunn diodes can now generate greater than 100 mW of power at 0.1 THz and 0.1 mW at 0.48 THz [124,125] (Fig.…”
Section: Electronic Thz Sources Using Frequency Up-conversion Schemesmentioning
confidence: 99%
“…In recent years, several groups have addressed the above challenges, resulting in the generation of higher power Gunn diodes [124,125], frequency multiplier units based on SBDs, impact ionization avalanche transit-time devices (IMPATTs) [126,127], tunneling transit time diodes (TUNNETT) [128][129][130], and resonant tunneling diodes (RTDs) [131]. For example, InP Gunn diodes can now generate greater than 100 mW of power at 0.1 THz and 0.1 mW at 0.48 THz [124,125] (Fig.…”
Section: Electronic Thz Sources Using Frequency Up-conversion Schemesmentioning
confidence: 99%
“…The Terahertz (THz) region of the electromagnetic (EM) spectrum is defined as frequencies ranging from 0.1 to 10 THz. Historically, fewer sources have been available for the THz region than for neighboring infrared (IR) and microwave spectral bands; however, over the past decade, numerous sources have been developed 1–22. These sources have proven to be valuable tools, and have provided solutions to a host of basic research problems.…”
Section: Introductionmentioning
confidence: 99%