Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Landis, Geoffrey A.; Loferski, J. J.; Beaulieu, R.; Sekula-Moisé, P. A.; Vernon, S. M.; Spitzer, M. B.; Keavney, C.J.

doi:10.1109/16.46369

Cited by 29 publications

(12 citation statements)

References 13 publications

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“…[14][15][16] ZnS has also exhibited excellent surface passivation in heterojunctions with other semiconductors, including Si, Cu(In,Ga)Se 2 , CdTe, and GaAs. [17][18][19][20] Anderson band alignment theory 21 predicts a valence-band offset (DE V ) and a conduction-band offset (DE C ) of roughly À2.5 eV and À0.3 eV, respectively, for a ZnS/Zn 3 P 2 heterojunction. However, the actual band offsets often deviate from the ideal values, 22 thus highlighting the need for direct measurement of the energy-band alignment.…”

Section: à3mentioning

confidence: 99%

Band alignment of epitaxial ZnS/Zn3P2 heterojunctions

Bosco

Demers

Kimball

et al. 2012

Journal of Applied Physics

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A unique photoemission method to measure semiconductor heterojunction band offsets Appl. Phys. Lett. 102, 012101 (2013) Charge carrier relaxation and effective masses in silicon probed by terahertz spectroscopy J. Appl. Phys. 112, 123704 (2012) Digging up bulk band dispersion buried under a passivation layer Appl. Phys. Lett. 101, 242103 (2012) A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures Appl. Phys. Lett. 101, 241602 (2012) Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement

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Section: à3mentioning

confidence: 99%

Band alignment of epitaxial ZnS/Zn3P2 heterojunctions

Bosco

Demers

Kimball

et al. 2012

Journal of Applied Physics

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“…Its large bandgap energy of 2.26 eV at 300 K makes it more transparent in the UV than a-Si:H and promises good passivation properties. [4,5,6,7] Heterojunctions with GaP as the front emitter or as a window layer on silicon solar cells have already been reported. [4,5,6,8,9] However, none of the structures proposed in the literature investigate heterojunction solar cells with a very thin emitter (less than 20 nm) as currently used for a-Si:H / c-Si heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

Solar cells with gallium phosphide/silicon heterojunction

Darnon

Varache

Descazeaux

et al. 2015

AIP Conference Proceedings

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“…Another application includes higher efficiency solar cells, which are also currently under investigation [4,5]. Advantages of using wide-band gap material in solar cells include lower losses in the window region, and lower ohmic losses.…”

Section: Introductionmentioning

confidence: 99%

Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

et al. 2001

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This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP) 2 Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low -angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 x 1015 cm-3 were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) -p (Si) diodes fabricated are also presented.

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Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Cited by 29 publications

References 13 publications

Band alignment of epitaxial ZnS/Zn3P2 heterojunctions

Band alignment of epitaxial ZnS/Zn3P2 heterojunctions

Solar cells with gallium phosphide/silicon heterojunction

Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

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