2021
DOI: 10.1109/ojpel.2021.3094713
|View full text |Cite
|
Sign up to set email alerts
|

Wide-Bandgap Device Enabled Multilevel Converters With Simplified Structures and Capacitor Voltage Balancing Capability

Abstract: This paper aims to point out and demonstrate the opportunities enabled by wide-bandgap (WBG) devices for multilevel converters, contributing to the international technology roadmap for WBG power semiconductors (ITRW). The emergence of silicon carbide (SiC) and gallium nitride (GaN) devices offers new opportunities to push the boundaries of power converter performances. Featuring high single-device blocking voltage and ultra-low switching loss, WBG devices can enable a group of multilevel converters with simpli… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
9
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
3
3

Relationship

2
4

Authors

Journals

citations
Cited by 9 publications
(9 citation statements)
references
References 26 publications
0
9
0
Order By: Relevance
“…As analyzed in [2], [16], considering a 1200 V dc-link voltage, S1 and S3 in this topology both block and switch at 400V, while S2 blocks up to a static 800 V and switches still at 400 V. In other words, the worst-case for S2 starts from blocking a 400 V followed by a 400 V switching, which brings the voltage across S2 to 800 V. Therefore, 1700V power modules are selected for S2 to leave a +112% margin (with reference to the 800 V static blocking voltage). Power modules for S1 and S3 are rated at 1200V to leave a +200% margin (with reference to 400 V switching voltage).…”
Section: B Power Devicesmentioning
confidence: 99%
See 3 more Smart Citations
“…As analyzed in [2], [16], considering a 1200 V dc-link voltage, S1 and S3 in this topology both block and switch at 400V, while S2 blocks up to a static 800 V and switches still at 400 V. In other words, the worst-case for S2 starts from blocking a 400 V followed by a 400 V switching, which brings the voltage across S2 to 800 V. Therefore, 1700V power modules are selected for S2 to leave a +112% margin (with reference to the 800 V static blocking voltage). Power modules for S1 and S3 are rated at 1200V to leave a +200% margin (with reference to 400 V switching voltage).…”
Section: B Power Devicesmentioning
confidence: 99%
“…This uneven loss distribution is undesirable in multilevel converters as established in [5]- [11], which poses challenges in the thermal design and limits the converter performance. Moreover, because over 60% of the power loss is concentrated on the primary (outer) modules in the all-SiC+4L-ANPC configuration as reported in [2], only 20% loss on each of the secondary (inner) modules appears to question the meaningfulness and necessity of employing the costly SiC devices for all of them. Additionally, the all-SiC solution also brings other disadvantages such as the high dv/dt issues due to the fast switching of SiC devices which can lead to EMI issues, insulation stress and motor terminal overvoltage [12].…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…Several alternatives have been proposed being the multilevel converters one of the most popular. This solution is characterized by the ability to turn off and on power cells to supply and vary either voltage or current [3]. However, when the variations required are wide, more cells and control signals are required, making the converter implementation complex.…”
Section: Introductionmentioning
confidence: 99%