2012
DOI: 10.1002/pip.2244
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Wide bandgap Cu(In,Ga)Se2 solar cells with improved energy conversion efficiency

Abstract: We report on improvements to the energy conversion efficiency of wide bandgap (Eg > 1.2 eV) solar cells on the basis of CuIn1−xGaxSe2. Historically, attaining high efficiency (>16%) from these types of compound semiconductor thin films has been difficult. Nevertheless, by using (a) the alkaline‐containing high‐temperature EtaMax glass substrates from Schott AG, (b) elevated substrate temperatures of 600–650 °C, and (c) high vacuum evaporation from elemental sources following National Renewable Energy Laborator… Show more

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Cited by 198 publications
(142 citation statements)
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“…This signifi cantly expanded the technical potential of highly effi cient solar cells compared with the previously achieved η ~ 19.9% for x = 0.3 and E g ~ 1.1-1.2 eV [4]. In particular, η ~ 16 and >18% for E g ~ 1.45 and 1.30 eV for thin-fi lm CIGS solar cells [1]. Therefore, further progress in fabricating CIGS solar cells may be related to obtaining more detailed information on their optical properties (absorption, refl ectance, luminescence, etc.)…”
mentioning
confidence: 91%
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“…This signifi cantly expanded the technical potential of highly effi cient solar cells compared with the previously achieved η ~ 19.9% for x = 0.3 and E g ~ 1.1-1.2 eV [4]. In particular, η ~ 16 and >18% for E g ~ 1.45 and 1.30 eV for thin-fi lm CIGS solar cells [1]. Therefore, further progress in fabricating CIGS solar cells may be related to obtaining more detailed information on their optical properties (absorption, refl ectance, luminescence, etc.)…”
mentioning
confidence: 91%
“…The most signifi cant practical result was the fabrication of solar cells of CuIn 1-x Ga x Se 2 (CIGS) solid solutions with effi ciencies η ~ 19.0-20.3% [1-6]. These effi ciencies are some of the highest for known thin-fi lm semiconductor solar-energy collectors [1,3,4]. In particular, the most similar competitive solar cells that represent an alternative to those based on CIGS solid solutions are based on simpler semiconductors and have lower effi ciencies, e.g., CdTe, η ~ 18.3%; amorphous α-Si:H, η ~ 16.1%; and nanocrystalline Si (nc-Si), η ~ 10.1% [6].…”
mentioning
confidence: 99%
“…[20,21] Some current solar cells are also made of GaAs, InP, GaInP, CIS, CIGS, CZTS, CdTe, etc. [22][23][24][25][26][27][28] GaAs thin-film cell, with a bandgap of 1.4 eV, demonstrates a high efficiency of 28%. [29,30] Dye-sensitized solar cells [31,32] and organic solar cells [33,34] also develop quickly.…”
Section: Shengyong Xu and Xiaohui Sumentioning
confidence: 99%
“…Potentially, reduced crystal lattice distortion leads to a minimum in defect concentration [23]. Furthermore, grain size and subsequently grain boundary area are sensitive to Ga/(In+Ga) [7,8,24]. Therefore, concomitant changes and interdependencies between Na, O incorporation, Ga/(In+Ga), and grain boundary area and activity present a challenge to unraveling the source of improvements made to the CIGS absorber and solar cell.…”
Section: Introductionmentioning
confidence: 99%
“…Improvements made over the years to increase CIGS solar cell efficiency include bandgap grading, which relies on liquid-assisted growth by the three-stage coevaporation method [1]: Na diffusion out of a soda-lime glass [2], postdeposition treatment (PDT) with NaF impacting grain boundary passivation [3], PDT with KF [4,5], and optimization of Ga/(In+Ga) composition [5][6][7][8]; however, improvements require substantially further study. In light of the important role that Na plays in CIGS layers, several groups have examined the growth and performance of CIGS layers by systematically varying Na content [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%