2019
DOI: 10.1021/acsaem.9b00690
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Wide-Bandgap Cu(In,Ga)S2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices

Abstract: Whole-chalcopyrite-based tandem devices for photoelectrochemical (PEC) water splitting have emerged as a promising route for obtaining ∼20% solar-to-hydrogen efficiencies. Here we pursue this approach by demonstrating integration of the top cell wide-bandgap (E G ) chalcopyrite onto a transparent conductor, which is a critical step in the realization of tandem devices. We report specifically on our efforts to synthesize photoactive Cu(In,Ga)S 2 thin films on transparent conductive F:SnO 2 (FTO), while preservi… Show more

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Cited by 22 publications
(29 citation statements)
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“…Compared to Si solar cell, the outstanding advantage of CIGS is that the band gap energy can be modulated to effectively absorb the solar spectrum, so it is also widely used to achieve water splitting [129][130][131]. For purpose of overcoming the problem of low energy to drive overall water splitting, connected series into a monolithic device can be Fig.…”
Section: By Conventional Solar Cellsmentioning
confidence: 99%
“…Compared to Si solar cell, the outstanding advantage of CIGS is that the band gap energy can be modulated to effectively absorb the solar spectrum, so it is also widely used to achieve water splitting [129][130][131]. For purpose of overcoming the problem of low energy to drive overall water splitting, connected series into a monolithic device can be Fig.…”
Section: By Conventional Solar Cellsmentioning
confidence: 99%
“…Downloaded on 7/26/2021 2:24:31 AM. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.This present paper builds upon the results reported in Ref [30]. and focuses on the integration of thicker (1200 nm) 2.0 eV CIGS absorbers on FTO and interfaced with CdS buffer layers.…”
mentioning
confidence: 84%
“…From calculated natural band alignments in Ref [64]. and the analysis of the CIGS band edges with composition,65 we estimate a cliff-like CBO of ~0.5-0.6 eV for 0.73 GGI CdS/CIGS heterojunction. If we also consider the possible formation of offstoichiometric Cu-deficient phases, or "ordered vacancy" compounds (OVCs) in the sulfide interface, this can also influence the resulting band offsets with CdS.…”
mentioning
confidence: 86%
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“…One class of materials that offers a particular challenge is the chalcopyrites Cu(In,Ga)(S,Se) 2 . These materials are gaining momentum as prospective photocathodes for H 2 production in photoelectrochemical (PEC) water splitting cells [8–12] . Their attractiveness relies on their superb optoelectronic properties, their compatibility with solution‐based manufacturing techniques, their ready‐to‐market photovoltaic performance, and their well‐positioned energy bands to trigger the hydrogen evolution reaction (HER), among others [13–15] .…”
Section: Figurementioning
confidence: 99%