2017
DOI: 10.1016/j.matlet.2016.08.026
|View full text |Cite
|
Sign up to set email alerts
|

Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
5
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 13 publications
(5 citation statements)
references
References 15 publications
0
5
0
Order By: Relevance
“…This research effort was geared toward NP application in complementary metal-oxidesemiconductor transistors. 15 Manikantan et al 65 used coprecipitation to prepare strontium-doped hafnium oxide NPs for optoelectronic device applications. In this synthesis strontium hydroxide hydrate was added dropwise to HfCl 4 in aqueous solution and was allowed to stir for 5 h. Subsequent dropwise addition of ammonia induced precipitation of strontium-doped hafnium hydroxide that was then washed and calcinated.…”
Section: Nanoparticle Synthesismentioning
confidence: 99%
“…This research effort was geared toward NP application in complementary metal-oxidesemiconductor transistors. 15 Manikantan et al 65 used coprecipitation to prepare strontium-doped hafnium oxide NPs for optoelectronic device applications. In this synthesis strontium hydroxide hydrate was added dropwise to HfCl 4 in aqueous solution and was allowed to stir for 5 h. Subsequent dropwise addition of ammonia induced precipitation of strontium-doped hafnium hydroxide that was then washed and calcinated.…”
Section: Nanoparticle Synthesismentioning
confidence: 99%
“…131), (003) orientation planes respectively, which indicates the hexagonal structure of the CaP-CS NC and it is in close agreement with the standard JCPDS file no 82-0807 which in turn implies that the prepared sample was free from impurities. The crystallite size of CaP-CS NC was estimated using Scherrer's formula (Manikantan et al 2017). Table 1 shows the estimated structural characteristic of CaP-CS NC.…”
Section: Xrdmentioning
confidence: 99%
“…Karmaoui, et al prepared ultrafine strontium hafnium oxide (SrHfO 3 ) nanoparticles of 2.5 nm in size and demonstrated its potential as high-k gate dielectrics [110]. These perovskite-types, strontium-doped or mixed hafnium oxides with other metal oxides recently gained much interest because of exhibiting ferroelectric behavior and ultimately utilized in optoelectronic device applications [111][112][113][114]. The dielectric constant reported by Karmaoui, et al was 17.0 and a relatively large capacitance value of 9.5 nF cm −2 [110].…”
Section: High-k Dielectric Nanoparticlesmentioning
confidence: 99%