Wide Band Gap Gallium Phosphide Solar Cells

Lu, Xuesong; Huang, Shou-Hsuan Stephen; Diaz, Michèle T.; Kotulak, Nicole A.; Hao, Ruiying; Opila, R. L.; Barnett, Allen

doi:10.1109/jphotov.2011.2182180

Cited by 43 publications

(39 citation statements)

References 13 publications

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“…This low overall EQE might also be due to the presence of ZnO complex that is almost unavoidable in GaP substrate (Montgomery et al 2011), therefore reducing the carrier diffusion length. Another issue might be due to the p-GaP layer surface recombination velocity, which could explain the low EQE in the blue region (over 2.6 eV) (Lu et al 2012). Therefore, in order to improve the efficiency of those solar cells, we have studied a second structure with a 30-nm-thin GaP window layer (as compared to the 250-nmthick previous one), a 0.3-µm-thick GaAsPN absorber (as compared to the 1-µm-thick previous one) and a GaP substrate which has been thinned down to 250 µm (as compared to the 400-µm-thick previous one).…”

Section: Early-stage Results On Pin Diodes Grown On Gap(001) Substratementioning

confidence: 99%

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Durand

Almosni

Wang

et al. 2014

Energy Harvesting and Systems

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GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An earlystage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.

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Section: Early-stage Results On Pin Diodes Grown On Gap(001) Substratementioning

confidence: 99%

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Durand

Almosni

Wang

et al. 2014

Energy Harvesting and Systems

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“…1a]. This makes GaP an important material for light emitting diodes 30 , photovoltatics 31 and water splitting photocatalysts 32 working in the visible range. Because GaP has a good epitaxial relationship with Si, it also provides an avenue for introducing optoelectronic functions into Si based devices, as well as for high-efficiency multi-junction solar cells [33][34][35][36] .…”

Section: Introductionmentioning

confidence: 99%

Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

et al. 2015

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The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-hole plasma in the indirect gap semiconductor GaP are investigated by experiment and theory. For below-gap excitation and probing by 800-nm light, only the bare longitudinal optical (LO) phonons are observed. For above-gap excitation with 400-nm light, the photoexcitation creates a high density, nonequilibrium e−h plasma, which introduces an additional, faster decaying oscillation due to an LO phonon-plasmon coupled (LOPC) mode. The LOPC mode frequency exhibits very similar behavior for both n-and p-doped GaP, downshifting from the LO to the transverse optical (TO) phonon frequency limits with increasing photoexcited carrier density. We assign the LOPC mode to the LO phonons coupled with the photoexcited multi-component plasma. For the 400-nm excitation, the majority of the photoexcited electrons are scattered from Γ valley into the satellite X valley, while the light and spin-split holes are scattered into the heavy hole band, within 30 fs. The resulting mixed plasma is strongly damped, leading to the LOPC frequency appearing in the reststrahlen gap. Due to the large effective masses of the X electrons and heavy holes, the coupled mode appears most distinctly at carrier densities 5 × 10 18 cm −3 . We perform theoretical calculations of the nuclear motions and the electronic polarizations following an excitation with an ultrashort optical pulse to obtain the transient reflectivity responses of the coupled modes. We find that, while the longitudinal diffusion of photoexcited carriers is insignificant, the lateral inhomogeneity of the photoexcited carriers due to the laser intensity profile should be taken into account to reproduce the major features of the observed coupled mode dynamics.

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“…For impurity introduced only in GaP cell, short circuit current density J sc is 40.07 mA/cm 2 and efficiency is Moreover, fill-factor has also increased significantly when impurity is incorporated in both IPV layers of double junction cell although it reduced slightly in single junction cell by impurity inclusion. The results, therefore, demonstrate that double junction solar cell exhibits quantitative improvement in Jsc, η and fill-factor with impurity inclusion in IPV layers which is comparable to or in most of cases, higher than single junction counterparts.…”

Section: Results For Multijunction and Single Junction Cellmentioning

confidence: 99%

“…Basic parameters used for the cell are taken from [5], [10]- [11]. All simulations were performed at 300K and under illumination of AM 1.5G, 100mW/cm 2 . For double junction cell, at first, the simulation was done without impurity.…”

Section: Modelling Processmentioning

confidence: 99%

Performance Analysis of Impurity Photovoltaic Effect in Solar Cells

Khan¹,

Farzana²

2013

IJAPM

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Abstract-An investigation has been performed to study the Impurity Photovoltaic (IPV) effect in a double junction solar cell. Impurity has been introduced separately and simultaneously in the two sub-cells which have been found to increase the cell performance. Moreover, it is obtained that impurity incorporated in the sub-cell with the lower current has the dominant effect on improvement. Improvement in short circuit current, fill-factor and efficiency of the double junction cell have also been quantified to demonstrate the enhancement compared to the case of single junction cell. Thus, this study predicts an efficient approach of improving performance of multijunction cells.

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Wide Band Gap Gallium Phosphide Solar Cells

Cited by 43 publications

References 13 publications

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

Performance Analysis of Impurity Photovoltaic Effect in Solar Cells

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