2006
DOI: 10.1063/1.2199593
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Wide-band “black silicon” based on porous silicon

Abstract: Solar cells and optical detection devices often incorporate antireflective surfaces to reduce undesired reflection and enhance optical absorption. This letter reports a “black silicon” structure of antireflective porous silicon fabricated by using electrochemical etching. The sample has a gradient-index multilayer structure, i.e., the refraction indices of the structure increase from the top (near the air) to the bottom (near the Si substrate). Reflectance below 5% is obtained over a broad wave number range (3… Show more

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Cited by 158 publications
(92 citation statements)
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“…However, subwavelength surface texture on silicon is known to produce "black silicon" with a broadband antireflection at a far wider acceptance angle than single or multilayer antireflection films. [1][2][3][4][5] This nanometerscale texture also increases the Si surface area for other applications. [6][7][8] Black silicon texture has been produced by techniques including laser-chemical, 1 electrochemical, 2 and reactive-ion etching.…”
Section: Nanostructured Black Silicon and The Optical Reflectance Of mentioning
confidence: 99%
“…However, subwavelength surface texture on silicon is known to produce "black silicon" with a broadband antireflection at a far wider acceptance angle than single or multilayer antireflection films. [1][2][3][4][5] This nanometerscale texture also increases the Si surface area for other applications. [6][7][8] Black silicon texture has been produced by techniques including laser-chemical, 1 electrochemical, 2 and reactive-ion etching.…”
Section: Nanostructured Black Silicon and The Optical Reflectance Of mentioning
confidence: 99%
“…Black silicon texture has been produced by techniques including laser-chemical, 26 electrochemical, 27 and reactive-ion etching. 28 Whatever the production technique, a black silicon surface generally exhibits quasiperiodical conical structures of height and a period of a few microns (Fig.…”
Section: Black Siliconmentioning
confidence: 99%
“…22,23 There are several processing methods available for modifying the Si surface morphology. 1,5,7,[13][14][15]17,19,24,25 For example, etching methods, including chemical, electrochemical and dry etching, have been widely employed. 26,27 Dynamic etching of porous Si surfaces to a thickness of 100 nm has been demonstrated by Striemer and Fauchet, 27 who achieved an average reflection of 3.7% across the terrestrial solar spectrum.…”
Section: Introductionmentioning
confidence: 99%