White Organic Light Emitting Devices Based on Multiple Emissive Nanolayers

Rao, M. V. Madhava; Su, Yan Kuin; Huang, Teng‐Yi; Chen, Yi Chun

doi:10.1007/bf03353850

Cited by 12 publications

(1 citation statement)

References 28 publications

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“…This phenomenon would be depressed if the defects in the SiN x will be decreased through the growth optimization of the surrounding SiN x matrix. An alternative possibility for enhancing the recombination efficiency of electron–hole pairs at the Si NCs could be the design of the luminescent layer containing the Si NCs such as the multi-quantum well structure or electron blocking layer for preventing electron overflow from the luminescent layer generally used in organic, GaN-, and GaAs-based LEDs [21-24]. Based on the results of light output power and WPE, as can be seen in Figure 3c,d, use of the SL structure is a crucial role in enhancing the light output power and WPE of the Si NC LED.…”

Section: Resultsmentioning

confidence: 99%

Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

Huh¹,

Kim²,

Park³

et al. 2013

Nanoscale Res Lett

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We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED.

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Section: Resultsmentioning

confidence: 99%

Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

Huh¹,

Kim²,

Park³

et al. 2013

Nanoscale Res Lett

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Nano-Molecular Junctions on STM Tips

Huang

Yang

2011

Nano-Micro Lett.

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Abstract:We present a technique for building metal-organic-metal junctions, which contain ten or fewer conjugated molecules between each of such junction, and the investigations of the I-V response of these junctions. The junctions are made by self assembling thiolated molecules onto gold coated tips for use in scanning tunneling microscopy. We show that this easy technique probes the qualitative properties of the molecules. Currentvoltage characteristics of a Tour wire and a new molecular rectifier are presented.

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