White Light‐Emitting Diode From Sb‐Doped p‐ZnO Nanowire Arrays/n‐GaN Film

Abstract

A whole interfacial transition of electrons from conduction bands of n‐type material to the acceptor levels of p‐type material makes the energy band engineering successful. It tunes intrinsic ZnO UV emission to UV‐free and warm white light‐emitting diode (W‐LED) emission with color coordinates around (0.418, 0.429) at the bias of 8–15.5 V. The W‐LED is fabricated based on antimony (Sb) doped p‐ZnO nanowire arrays/Si doped n‐GaN film heterojunction structure through one‐step chemical vapor deposition with quenching process. Element analysis shows that the doping concentration of Sb is ≈1.0%. The I–V test exhibits the formation of p‐type ZnO nanowires, and the temperature‐dependent photoluminescence measurement down to 4.65 K confirms the formation of deep levels and shallow acceptor levels after Sb‐doping. The intrinsic UV emission of ZnO at room temperature is cut off in electroluminescence emission at a bias of 4–15.5 V. The UV‐free and warm W‐LED have great potential application in green lights program, especially in eye‐protected lamp and display since television, computer, smart phone, and mobile digital equipment are widely and heavily used in modern human life, as more than 3000 h per year.

Structural and electronic features of triphenylstibine-functionalized Fischer carbene complexes of molybdenum(0)

“…767.4 eV and 813.6 eV, respectively, and separated by ca. 46.2 eV, the binding energy values and the large spin orbit splitting correlate well with reported data [56]. A satellite structure at a few eV lower than the main Sb 3p 3/2 photoelectron lines can be observed, this peak is due to a shake-down (or shake-off) mechanism.…”

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

“…23,38 Under low forward injection currents ranging from 0.5 to 11.0 mA, electrons from the Ga impurity related level of ZnO:Ga arrived at the n-ZnO:Ga/p-GaN interface, and would then be captured by the holes of the Mg-related deep acceptor levels of the p-GaN layer, yielding a broad red light band around 650.0 nm. 62,63 On further increasing the injection current from 6.0 to 15.0 mA, ultraviolet light emission centered around…”

“…The limited increase in the broad red emission may be ascribed to the lower hole concentration in the p-GaN layer. 48,63 In addition, the ultraviolet emission showed a dominant peak wavelength centered around 375.0 nm, together with a narrowing of the spectral linewidth of the subband peaks to around 10 nm. The ultraviolet emission of the single MW based heterojunction diode can be assigned to NBEtype emission of ZnO:Ga. That is, holes in the p-GaN layer could tunnel into the ZnO:Ga MW at the interface of the emission device.…”

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

“…Nevertheless, the interfacial defects, inferior stability of organic materials, and energy‐level mismatch between hetero‐semiconductors inhibit the improvement of the device performance. In recent years, many efforts have been devoted to achieving controllable n‐ and p‐type doping in group‐II–VI nanostructures by introducing different doping atoms into the materials, but reliable and reproducible complementary doping still remains a challenge …”