White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor

Lam, Kin-Tak; Lin, Wei-Heng; Shei, Shih–Chang; Lin, Nan-Ming; Chen, Wei-Shou; Chang, Shoou‐Jinn

doi:10.1109/led.2016.2588887

Cited by 13 publications

(8 citation statements)

References 13 publications

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“…There are a few approaches for obtaining red emission. In some cases, blue and ultraviolet light have been used as pumping light sources to excite red-emitting quantum dots and phosphor [6,7]. However, blue and ultraviolet light are unhealthy for the eyes and skin, which is a growing concern.…”

Section: This Work Was Supported By the National Key Research And Dev...mentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

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Section: This Work Was Supported By the National Key Research And Dev...mentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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“…In addition to cascaded LEDs, cascaded laser diodes have also been reported for high-power applications, such as LiDAR systems. Table 4 lists the cascaded LEDs reported so far [8,10,[59][60][61][62][63][64][65]. Two reports on cascaded laser diodes are also listed [66,67].…”

Section: Ledsmentioning

confidence: 99%

GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy

Takeuchi

Kamiyama

Iwaya

et al. 2021

Semicond. Sci. Technol.

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This paper mainly describes the status and prospects of GaN-based tunnel junctions grown by metal-organic vapor-phase epitaxy. GaN-based tunnel junctions are expected to offer an alternative structure for hole injection in various optoelectronic devices, simultaneously providing additional features, such as electrical contacts between cascaded devices, current confinement, simple device fabrication processes, and novel controllability in band engineering. After reviewing the role of tunnel junctions and the history of the development of GaN-based tunnel junctions, the development details of GaInN, GaN, and AlGaN tunnel junctions are separately summarized, including those grown by molecular beam epitaxy. Various optoelectronic devices utilizing GaN-based tunnel junctions are reviewed from the viewpoint of device characteristics.

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“…Theoretically, the HP-LED can work continuously for 45,000-60,000 h [1]. Besides, it has no pollution to the environment due to the construction of silicon, sapphire, and gallium nitride with one LED chip [2]. As a result, it has been widely used in liquid crystal displays, spotlights, and indoor lighting and other fields [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Self‐powered HP‐LED intelligent energy management system with adaptive brightness adjustment

Hu,

Chen,

Jia

et al. 2024

Electronics Letters

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The energy harvesting system achieved from one environmental energy channel is facing more and more challenges in meeting the power supply of electronic energy‐consuming devices. In this study, a combined photovoltaic (PV) and Thermoelectric Generator (TEG) energy management system is proposed with intelligent self‐powered technique for high‐power light‐emitting diodes (HP‐LED) lighting. Both the solar energy and waste heat induced by PV and HP‐LED are synchronously converted into electrical energy. Self‐powered by this gathered power, an adaptive light intensity control of HP‐LED is also realized using the established feedback path between ambient light and HP‐LED light. Experimental results show that the supply voltage of the TEG required for startup of the whole system can be decreased as 20.8 mV. Only 10 s is needed to complete the startup process under sufficient light, while 25 s in case of insufficient conditions. This energy management can provide a new technology for future smart home and greenhouse planting.

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White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor

Cited by 13 publications

References 13 publications

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy

Self‐powered HP‐LED intelligent energy management system with adaptive brightness adjustment

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