Lattice defects affect the long-term stability of halide
perovskite
solar cells. Whereas simple point defects, i.e., atomic interstitials
and vacancies, have been studied in great detail, here we focus on
compound defects that are more likely to form under crystal growth
conditions, such as compound vacancies or interstitials, and antisites.
We identify the most prominent defects in the archetype inorganic
perovskite CsPbI
3
, through first-principles density functional
theory (DFT) calculations. We find that under equilibrium conditions
at room temperature, the antisite of Pb substituting Cs forms in a
concentration comparable to those of the most prominent point defects,
whereas the other compound defects are negligible. However, under
nonequilibrium thermal and operating conditions, other complexes also
become as important as the point defects. Those are the Cs substituting
Pb antisite, and, to a lesser extent, the compound vacancies of PbI
2
or CsPbI
3
units, and the I substituting Cs antisite.
These compound defects only lead to shallow or inactive charge carrier
traps, which testifies to the electronic stability of the halide perovskites.
Under operating conditions with a quasi-Fermi level very close to
the valence band, deeper traps can develop.