Wet-transfer of CVD-grown graphene onto sulfur-protected W(110)

Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria

“…We have previously shown that yttria deposition on metal supported graphene , as well as on graphene transferred to SiO 2 results in a uniform and pinhole-free film; this suggests that the graphene substrate material does not affect the wetting behavior of yttria on graphene significantly and thus the approach described here may be applicable to other supported graphene systems. As has been shown in the past, CVD-grown graphene can be successfully transferred to numerous flat substrates like SiO 2 . − Furthermore, our group has also transferred CVD-grown graphene to SrTiO 3 , MoS 2 , and sulfur-protected W(110) and in all of these studies we could show that a clean interface can be obtained by annealing in an ultrahigh vacuum (UHV). Here we show by atomic force microscopy (AFM), transmission electron microscopy (TEM), and low energy ion scattering spectroscopy (ISS) that the alumina film deposited on a yttria seed on the graphene/SiO 2 sample is uniform, pinhole-free, and conformal.…”

“…As has been shown in the past, CVD-grown graphene can be successfully transferred to numerous flat substrates like SiO 2 . 13−15 Furthermore, our group has also transferred CVD-grown graphene to SrTiO 3 , 16 MoS 2 , 17 and sulfur-protected W(110) 18 and in all of these studies we could show that a clean interface can be obtained by annealing in an ultrahigh vacuum (UHV). Here we show by atomic force microscopy (AFM), transmission electron microscopy (TEM), and low energy ion scattering spectroscopy (ISS) that the alumina film deposited on a yttria seed on the graphene/SiO 2 sample is uniform, pinhole-free, and conformal.…”

Impurities and Electronic Property Variations of Natural MoS2Crystal Surfaces

“…For reliable, reproducible, and manufacturable 2D devices, homogeneous and high quality MoS 2 (and other TMDs) is urgently needed, and any future work will have to be focused on reducing the density of such imperfections (e.g., vacancies, grain boundaries, various structural defects, and impurities). Enormous efforts are now underway on the growth of high quality (i.e., structural and low-impurity) TMD materials using a variety methods, and the understanding and control of defect physics and chemistry in these materials is of utmost importance in order to achieve high quality devices. − …”

“…Enormous efforts are now underway on the growth of high quality (i.e. structural and low-impurity) TMD materials using a variety methods, and the understanding and control of defect physics and chemistry in these materials is of utmost importance in order to achieve high quality devices [62][63][64][65]. …”

2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance

“…In addition, the liquid phase synthesis scheme can combine CVD with other methods to further improve the quality of vdWhs. Coy Diaz et al studied graphene/MoS 2 vdWh using this complex method, [71,72] where a semiconductor device based on 2D materials with good potential applications was designed. The experimental results showed that solution transfer resulted in water retention at the interface, which could be retreated in the vacuum.…”