2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance

Yu, Xiaohua; Wang, Xin; Zhou, Feifan; Qu, Junle; Song, Jun

doi:10.1002/adfm.202104260

Cited by 38 publications

(24 citation statements)

References 124 publications

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“…[106] Such vdW heterostructures can be composed of a variety of 2D materials in different combinations, thereby an unprecedented degree of control of their electronic and optical properties is achievable. [28,107,108] Notably, vdW heterostructures also have tunable band alignment, lack of lattice mismatching, atomically steep carrier gradient, fast charge transport, strong light-excitons interactions, and magnetic properties, which can be used for electronic, optoelectronic, spintronic, valleytronic, and electromagnetic devices. [109][110][111] The optoelectronic properties of vdW heterostructures can be tuned by gate voltage, strain, and its twisted angel.…”

Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

“…[26] Especially, 2D materials represented by van der Waals-stacked heterojunctions and homojunctions possess small sizes, ultrathin thicknesses, easy processing, and novel physical phenomena for exploring optoelectronic applications. [27][28][29] More importantly, optoelectronic devices based on 2D materials have been reported comparable performance at room temperature to devices based on traditional bulk semiconductors. [30] For optoelectronic integration, its basic functional units include light emission, optical modulation, light detection and reception, signal processing, and so on.…”

Section: Introductionmentioning

confidence: 99%

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Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

105

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2D materials show wide-ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light-matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field-effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures-of-merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.

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Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

105

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“…[3] The vdW interconnection between 2D materials makes it possible for the integration of different materials without considering the crystal lattice mismatching. [4,5] This makes it broad prospects for different optoelectronic purposes of the vdW heterojunctions with various 2D materials. [6,7] The built-in potential of vdW heterojunctions can reduce the dark current, efficiently separate the photo-generated electron-hole pairs, and enhance the efficiency of photon absorption, which is the most basic requirement to realize the high performances of photodetection.…”

Section: Ultra-thin Gese/ws 2 Vertical Heterojunction With Excellent ...mentioning

confidence: 99%

Ultra‐Thin GeSe/WS₂ Vertical Heterojunction with Excellent Optoelectronic Performances

Yan

Ning

Zhang

et al. 2022

Advanced Optical Materials

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Heterostructural engineering of atomically thin 2D materials offers an exciting opportunity to fabricate atomically sharp interfaces for optoelectronic devices. Herein, GeSe/WS2 heterojunction devices composed of 2D WS2 (n‐type) and few‐layer GeSe (p‐type), are fabricated by transferring mechanically exfoliated GeSe to chemical vapor deposition (CVD)‐grown WS2. Excellent rectification behavior is observed from the I−V characteristics of the GeSe/WS2 heterojunction devices. The reverse photocurrent increases more rapidly than the forward photocurrent under a 635 nm laser illumination, indicating an effective separation of the photogenerated carriers under a minus bias. A large photocurrent on‐off ratio of 103 at −5 V bias, a high responsivity (Rλ) of 1.1 A W−1, a considerable specific detectivity (D*) of 1.3×1010 Jones, and a high external quantum efficiency (EQE) of 214.8%, are obtained. Owing to the large built‐in potential of the heterojunction, efficient charge transfer is achieved from the abrupt interfaces even though vastly different materials are used in the van der Waals (vdW) heterostructure. A convenient route is demonstrated for the preparation of ultra‐thin GeSe/WS2 vdW heterojunctions. The results reveal great potential of the present GeSe/WS2 vertical heterojunction for future applications in optoelectronics.

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“…like stacking wood [ 42 , 43 , 44 ]. The “arbitrary combination” of the van der Waals heterostructure allows these individual materials to be combined together while still maintaining the ultra-thin thickness [ 45 ]. Therefore, the emergence of vdW heterostructures offers a new structural platform for exploring new electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Recent Research Progress in the Structure, Fabrication, and Application of MXene-Based Heterostructures

Yang

Chen

et al. 2022

Nanomaterials

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Two-dimensional (2D) materials have received increasing attention in the scientific research community owing to their unique structure, which has endowed them with unparalleled properties and significant application potential. However, the expansion of the applications of an individual 2D material is often limited by some inherent drawbacks. Therefore, many researchers are now turning their attention to combine different 2D materials, making the so-called 2D heterostructures. Heterostructures can integrate the merits of each component and achieve a complementary performance far beyond a single part. MXene, as an emerging family of 2D nanomaterials, exhibits excellent electrochemical, electronic, optical, and mechanical properties. MXene-based heterostructures have already been demonstrated in applications such as supercapacitors, sensors, batteries, and photocatalysts. Nowadays, increasing research attention is attracted onto MXene-based heterostructures, while there is less effort spent to summarize the current research status. In this paper, the recent research progress of MXene-based heterostructures is reviewed, focusing on the structure, common preparation methods, and applications in supercapacitors, sensors, batteries, and photocatalysts. The main challenges and future prospects of MXene-based heterostructures are also discussed to provide valuable information for the researchers involved in the field.

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2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance

Cited by 38 publications

References 124 publications

Perspectives of 2D Materials for Optoelectronic Integration

Perspectives of 2D Materials for Optoelectronic Integration

Ultra‐Thin GeSe/WS₂ Vertical Heterojunction with Excellent Optoelectronic Performances

Recent Research Progress in the Structure, Fabrication, and Application of MXene-Based Heterostructures

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2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance

Cited by 38 publications

References 124 publications

Perspectives of 2D Materials for Optoelectronic Integration

Perspectives of 2D Materials for Optoelectronic Integration

Ultra‐Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances

Recent Research Progress in the Structure, Fabrication, and Application of MXene-Based Heterostructures

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Ultra‐Thin GeSe/WS₂ Vertical Heterojunction with Excellent Optoelectronic Performances