Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters

Jung, Sung Soo; Song, Kiwon; Lee, Sung‐Nam; Kim, Hyunsoo

doi:10.1002/adma.201301640

Cited by 54 publications

(66 citation statements)

References 37 publications

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“…4a ). Details of the optical ray-tracing simulations can be found elsewhere 54 55 . The calculations showed that the 18% increase in the T op could lead to ~17% higher optical output power, indicating that another factor also contributed to the enhanced output power of the AgNW-LEDs.…”

Section: Discussionmentioning

confidence: 99%

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Jin

Jeong

et al. 2015

Sci Rep

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Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters.

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Section: Discussionmentioning

confidence: 99%

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Jin

Jeong

et al. 2015

Sci Rep

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“…Photons that were emitted outside of the escape cone can be redirected back into the escape cone. The escape probability is increased to create a more efficient and, hence, a cost‐competitive product . A schematic view of this surface difference and the influence on photon out‐coupling is provided in Figure a ‐b .…”

Section: Introductionmentioning

confidence: 99%

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of the product. Wet‐chemical etching of GaN is commonly carried out by treatment with aqueous KOH solution at elevated temperature. Thereby, the anisotropic etching results in a highly rough surface. Hence, a remarkably higher out‐coupling possibility of generated photons is feasible. On the other hand, anisotropy generally prohibits the application of a predictable and standardized etching process. In this review, both material‐ and process‐dependent influences on the etching performance in aqueous KOH solution are classified. Herein, we critically present the factors that affect the etching rate of GaN. Moreover, the etching mechanism at the molecular level and the generation of anisotropy from the hexagonal crystal lattice are discussed. The existing gaps in the current understanding of this process maintain the field still open for further research aligned to a permanent interest of the electronic industry.

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“…Specifically, the cause of LED chips failure is degradation of ohmic contacts associated with current crowding and generation of nonradiative recombination defects, while packaging materials deterioration results from modifications to their optical properties. Of these mechanisms, the generation of nonradiative recombination defects should be carefully considered because it is an intrinsic problem in materials properties, which requires a great deal of efforts and times to improve, whereas efforts to improve the device processes and the quality of packaging materials seemed to be more successful based on recent achievements .…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN-based light-emitting diodes degraded by generation of deep-level states

Jung

Kim

2014

Phys. Status Solidi A

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Phone: þ82 63 270 3974, Fax: þ82 63 270 3585GaN-based light-emitting diodes (LEDs) degraded by the generation of deep-level states were analyzed by means of temperature dependent current-voltage measurements. After accelerated aging test of LEDs, the density of deep-level states was found to increase by a factor of $5.0, which resulted in an increase in junction temperature of 7 8C associated with increased nonradiative recombination.The optical microscopy images of LEDs under zero bias (left) and 50 mA (right).

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Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters

Cited by 54 publications

References 37 publications

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Analysis of GaN-based light-emitting diodes degraded by generation of deep-level states

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