Etching of gallium nitride is a key step in the production of blue and white light‐emitting diodes (LEDs). Etching in aqueous KOH solution creates a rough surface on the LED chip to facilitate outcoupling of the photons generated, drastically increasing the resulting LED's efficiency. Compared with the common technique of dry etching, wet‐chemical etching using aqueous KOH solution has significant advantages, e.g., lower complexity and cost and less remaining surface damage. An in‐depth analysis of the molecular etch reaction by characterization of the reaction products is reported. The mechanism identified explains the cause of anisotropic etching, which leads to the formation of hexagonal pyramids. The concept of hydroxide repulsion by protruding NH and NH2 groups established in the literature is adapted and further developed. The susceptibility of several polar, semipolar, and nonpolar crystal facets may also be explained, as well as the commonly observed increase in average pyramid size over etch time.
Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of the product. Wet‐chemical etching of GaN is commonly carried out by treatment with aqueous KOH solution at elevated temperature. Thereby, the anisotropic etching results in a highly rough surface. Hence, a remarkably higher out‐coupling possibility of generated photons is feasible. On the other hand, anisotropy generally prohibits the application of a predictable and standardized etching process. In this review, both material‐ and process‐dependent influences on the etching performance in aqueous KOH solution are classified. Herein, we critically present the factors that affect the etching rate of GaN. Moreover, the etching mechanism at the molecular level and the generation of anisotropy from the hexagonal crystal lattice are discussed. The existing gaps in the current understanding of this process maintain the field still open for further research aligned to a permanent interest of the electronic industry.
In this work, we demonstrated that the simple substitution of the 1,2,4-triazole moiety in 5-( 4H-1,2,4-triazol-4-yl)isophthalic acid (5-TIA) by the 1 H-1,2,3-triazol-5-yl unit enables the preparation of a hydrogelator (click-TIA). In sharp contrast to 5-TIA, its isostere click-TIA undergoes self-assembly in water upon sonication, leading to the formation of stable supramolecular viscoelastic hydrogels with a critical gelation concentration of 6 g/L. Hydrogels made of click-TIA as well as hybrid hydrogels made of the mixture click-TIA + 5-TIA (molar ratio 1:0.2) were used to compare different properties of the materials (i.e., rheological properties, thermal properties, mechanical stability, morphology). In terms of toxicity, neither click-TIA nor 5-TIA showed cytotoxic effects on cellular viability of HeLa cells up to 2.3 × 10 g/L when compared to untreated cells incubated with DMSO. Furthermore, the hydrogels were used for the encapsulation and in vitro controlled release of oxytetracycline that followed first-order kinetics. For the hydrogel made of click-TIA, a maximum drug release of ∼60% was reached after ∼8 h within a pH range between 6.5 and 10. However, the release rate was reduced to approximately half of its value at pH values between 1.2 and 5.0, whereas the use of hybrid hydrogels made of click-TIA + 5-TIA allowed to reduce the original rate at pH ≤ 6.5.
Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray diffraction (XRD). Thin-film processing including laser lift off (LLO) was applied. The influence of epitaxial changes on the N-face etch kinetics was determined in aqueous KOH solution at elevated temperature. Inductively-coupled plasma optical emission spectroscopy (ICP-OES) was used to measure the etch progress in small time increments with high precision. Thereby, the disadvantages of other techniques such as determination of weight loss or height difference were overcome, achieving high accuracy and reproducibility.
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