WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system

Badger, Karen; Yonetani, Masashi; Toda, Yusuke; Kagawa, M.; Isogawa, Takeshi; Heumann, Jan

doi:10.1117/12.2502560

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…Both DUV and EB tools have been designed for patterned mask inspection. The optical inspection system uses a 19Â nm light source (Badger et al 2018) and provides superior throughput relative to other methods, although the resolution has some limits. This system uses various optical information with focus and polarization.…”

Section: Optical Illumination Systemsmentioning

confidence: 99%

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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Semiconductor lithography currently provides a resolution close to 10 nm, with the aim of producing extremely fine patterning. Over the last decade, lithography techniques have progressed from ArF immersion to multiple patterning to extreme ultraviolet lithography (EUVL) operating at a wavelength of 13.5 nm. During this period, the first-generation lithography devices were immersion systems and achieved 40 nm resolution through a 1.35 numerical aperture (NA) projection lens in conjunction with an ArF laser (operating at 193 nm) and water immersion. To make full use of the capability of the projection lens, A. Suzuki (*) Head quarter, AS Lithography Consulting

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Section: Optical Illumination Systemsmentioning

confidence: 99%

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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“…Metrology/inspection techniques that use deep ultraviolet or E-beam light sources can be applied for preliminary investigation of EUV masks, but actinic techniques using 13.5-nm wavelength are known to be necessary for precise measurement of aerial critical dimensions (CDs) and unfailing detection of printable defects. [3][4][5][6][7][8][9][10][11][12] In this study, EUV scanning lensless imaging (ESLI), which uses a coherent EUV light source generated by high-harmonic generation (HHG) and coherent diffractive imaging (CDI), is introduced, which can be applied for inspection/metrology of EUV masks with or without pellicles. We have already reported quantitative analysis of the phase shift effect of EUV phase shift mask using single-shot CDI engines, such as error reduction algorithm (ERA) and hybrid input-output (HIO) algorithm.…”

Section: Introductionmentioning

confidence: 99%

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo

Kim

Jang

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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Background: An extreme ultraviolet (EUV) pellicle is necessary to increase the process yield even though the declining throughput is a big concern. However, an EUV metrology/inspection tool for this pellicle has not been commercialized yet. Aim: The goal of this study is to verify the pellicle/mask inspection feasibility of EUV scanning lensless imaging (ESLI) and verify the impact of contaminants on pellicles depending on their size. Approach: Through-pellicle imaging was implemented by using ESLI, which uses a high-order harmonic generation EUV source and ptychography. Optical characteristics of various sizes of Fe-contaminated EUV pellicles were evaluated to verify their impact on wafer images. Results: Large size (∼10 μm) contaminants on the pellicle were found to contribute to the final wafer pattern loss. However, small size (2 to 3 μm) contaminants on the pellicle do not have substantial impact on the wafer image. Conclusions: The defect detection capability of ESLI for pellicle and mask was confirmed. Therefore, ESLI is useful in applications like pellicle qualification and EUV mask inspection metrology.

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Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2021

Handbook of Laser Micro- And Nano-Engineering

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WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system

Cited by 4 publications

References 2 publications

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

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