Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo, Dong Gon; Kim, Young Woong; Jang, Yong Ju; Wi, Seong Ju; Ahn, Jinho

doi:10.1117/1.jmm.18.3.034005

“…At present, most advanced chips are manufactured through EUV lithography process [6][7][8] . In order to increase the quality and yield of the chips, a rigorous detection of the mask [9][10][11][12][13][14][15] is a necessary process. As the mask acting as a 'film' in lithography, the defects or pattern position errors on the mask will be replicated to the wafer.…”

Section: Introductionmentioning

confidence: 99%

Mask Defect Detection by Combining Wiener Deconvolution and Illumination Optimization

Kunyang,

Deng,

Zhang

et al. 2024

Preprint

0

View full text Add to dashboard Cite

In the extreme ultraviolet (EUV) lithography process, mask defect is inevitably replicated on chips hence the yield and quality of the product are directly related to the mask quality. Mask microscopy resolution is then an essential specification. In this work, a high-efficiency method for enhancing the resolution of mask defect is proposed based on illumination optimization and Wiener deconvolution. To validate this approach, we established a verification apparatus designed to achieve a theoretical resolution of 3.0 μm with visible light. Remarkably, the empirical results demonstrated that the actual resolution attained is as low as 2.5 μm, which can be extrapolated to 53 nm resolution based on the wavelength ratio to an EUV source. The verification demonstrates a significant improvement for various periodic fringes. Moreover, the augmented capability of the apparatus facilitates the identification of mask defects.

show abstract

“…At present, most advanced chips are manufactured through EUV lithography process [6][7][8] . In order to increase the quality and yield of the chips, a rigorous detection of the mask [9][10][11][12][13][14][15] is a necessary process. As the mask acting as a 'film' in lithography, the defects or pattern position errors on the mask will be replicated to the wafer.…”

Section: Introductionmentioning

confidence: 99%

Mask Defect Detection by Combining Wiener Deconvolution and Illumination Optimization

Kunyang,

Deng,

Zhang

et al. 2024

Preprint

0

View full text Add to dashboard Cite

In the extreme ultraviolet (EUV) lithography process, mask defect is inevitably replicated on chips hence the yield and quality of the product are directly related to the mask quality. Mask microscopy resolution is then an essential specification. In this work, a high-efficiency method for enhancing the resolution of mask defect is proposed based on illumination optimization and Wiener deconvolution. To validate this approach, we established a verification apparatus designed to achieve a theoretical resolution of 3.0 μm with visible light. Remarkably, the empirical results demonstrated that the actual resolution attained is as low as 2.5 μm, which can be extrapolated to 53 nm resolution based on the wavelength ratio to an EUV source. The verification demonstrates a significant improvement for various periodic fringes. Moreover, the augmented capability of the apparatus facilitates the identification of mask defects.

show abstract

“…The DRAM memory cell consists of an n-MOSFET, which is used as a selector, and a capacitor used as a memory component. Extreme ultraviolet lithography has recently been introduced to resolve the limits of DRAM-cell scaling-down, since it can improve the scaling-down capability and reduce the production cost of memory cells [3][4][5][6][7]. Alternatively, the one transistor (T)-DRAM, fabricated with a fully depleted silicon-on-insulator (FDSOI) n-MOSFET and three electrodes (i.e.…”

Section: Introductionmentioning

confidence: 99%

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Kim¹,

Kim²,

Park³

et al. 2021

Nano Futures

1

0

View full text Add to dashboard Cite

In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

show abstract

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Cited by 6 publications

References 27 publications

Mask Defect Detection by Combining Wiener Deconvolution and Illumination Optimization

Mask Defect Detection by Combining Wiener Deconvolution and Illumination Optimization

Mask Defect Detection by Combining Wiener Deconvolution and Illumination Optimization

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Contact Info

Product

Resources

About