Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

Chen, Y. S.; Chen, B.; Gao, Bin; Liu, L. F.; Liu, X. Y.; Kang, Jinfeng

doi:10.1063/1.4803076

Cited by 54 publications

(19 citation statements)

References 29 publications

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“…A large effort of experimental works is directed to finding ways of confining the conductive filament in the host oxide insulator, in order to improve the uniformity of resistive switching characteristics. It was found that, aside from embedding nanocrystals and multilayer structures, doping with foreign elements is an easy and effective way to improve resistive switching properties [60][61][62]. Therefore, in order to better understand the ionic conduction properties of the predicted I bam-Hf 2 O 3 phase, we calculated migration barriers for the most important elements, typically used for doping HfO 2 and as electrodes (see Table III).…”

Section: B Functionality With Respect To Forming and Switchingmentioning

confidence: 99%

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Rushchanskii

Blügel

2018

Phys. Rev. Materials

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We investigate metastable and thermodynamically stable phases that can be expected to occur in electroformed filaments in resistively switching hafnia, and discuss their relevance for the switching process. To this end, we conduct a study, based on density functional theory combined with an evolutionary algorithm determining the composition-dependent (meta)stable phases in HfO x , focusing on the region 0 < x < 2. We find that oxygen vacancies in hafnia tend to form regular patterns, which leads to periodic metastable structures featuring onedimensional open channels, thus favoring ionic conductivity in the host material, i.e., oxygen migration. The band gap of such structures is systematically lowered with increasing oxygen deficiency, resulting in metallic behavior when oxygen migrates out of the channels. Moreover, we find that the solubility of oxygen in metallic Hf is very high, up to one oxygen per six metallic atoms, the concentration corresponding to a thermodynamically stable and ordered metallic compound, Hf 6 O. Therefore, thick enough metallic capping of Hf could play the role of an active electrode for hosting oxygen which migrates out of HfO 2. In combination with reversible oxygen migration in predicted suboxide phases, this should lead to robust resistive memory cells with high endurance and long retention.

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Section: B Functionality With Respect To Forming and Switchingmentioning

confidence: 99%

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Rushchanskii

Blügel

2018

Phys. Rev. Materials

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“…However, compared with high performance metal oxides-based memristors, [64][65][66][67][68] the endurance characteristics and power consumption of the OHPs-based memristors should be improved for further practical memory applications. In addition, some effective methods that have been carried out previously to improve the memristive performances would also applicable in OHPs-based memristors, such as embedding metal clusters, [120][121][122] introducing porous layer, [123][124][125][126] and doping, [127][128][129] and so on.…”

Section: Memristive Characteristics For Memory Applicationsmentioning

confidence: 99%

Memristors with organic‐inorganic halide perovskites

Zhao

Lin

et al. 2019

InfoMat

144

115

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Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%. The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics, such as light‐emitting diodes, photodetectors, transistors. New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck. As the fourth basic circuit element, memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications. Recently, OHPs have received growing attention as promising materials for memristors. In particular, their mixed ionic‐electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical‐erase memory, optogenetics‐inspired synaptic functions, and light‐accelerated learning capability. This review covers recent advances in OHP‐based memristors development including memristive mechanism and analytical models, universal memristive characteristics for memory and neuromorphic computing applications, and novel multi‐functionalization. Challenges and future prospects of OHP‐based memristors are also discussed.

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“…RRAM is one of the most promising candidates for next generation of nonvolatile memory owing to its excellent performance, such as simple structure, low power consumption, fast switching speed, long retention time, and CMOS technology compatibility [4][5][6]. However, the key electrical characteristics of oxide-based RRAM devices still have random dispersion, such as operation voltage and high/low resistance values [7][8][9][10][11][12]. One of the main challenges that hinder RRAM devices from practical device application is exploring effective ways to suppress the fluctuations of key switching parameters, thus improving the resistive switching uniformity.…”

Section: Introductionmentioning

confidence: 99%

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO₂Based RRAM Devices

Liu

Hou

Zhang

et al. 2015

Advances in Condensed Matter Physics

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HfAlO2based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2based RRAM devices is related to changes in compositional and structural properties of the HfAlO2resistive switching film with the ozone treatment.

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Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

Cited by 54 publications

References 29 publications

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Memristors with organic‐inorganic halide perovskites

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO₂Based RRAM Devices

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Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

Cited by 54 publications

References 29 publications

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Routes for increasing endurance and retention in HfO2 -based resistive switching memories

Memristors with organic‐inorganic halide perovskites

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2Based RRAM Devices

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Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO₂Based RRAM Devices