Weak localization, Aharonov-Bohm oscillations, and decoherence in arrays of quantum dots

Golubev, Dmitri S.; Semenov, Andrew G.; Zaikin, Andrei D.

doi:10.1063/1.3518036

Cited by 4 publications

(2 citation statements)

References 74 publications

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“…The competing behavior between WAL and WL provides strong evidence for the quantum mechanical scattering of electrons due to QDs. [ 35,36 ] In Figure 3d, a short phase‐coherence length ( L ϕ ) of ≈3nm is observed at 4 and 5 K via the fitting of WAL by use of Hikami–Larkin–Nagaoka theory. [ 37 ] The scale of L ϕ is about the same size as that of QDs diameter, which indicates that the quantum interference of electron waves in QDs exists in the film.…”

Section: Resultsmentioning

confidence: 99%

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

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Section: Resultsmentioning

confidence: 99%

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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“…In the literature in 1980s, the saturation behavior of τ 0 ϕ was often ascribed to spin-spin scattering due to the presence of a tiny amount of magnetic impurity in the sample [52][53][54]. Recently, the non-magnetic origins, such as non-equilibrium dephasing [55], e-e interaction [56,57], and specific structural defect [58][59][60] were proposed to explain the saturation behavior of τ 0 ϕ . In this study, we have intentionally focused on T ≥ 4 K to minimize the influence of 1/τ 0 ϕ on extracting A S ee and A L ee .…”

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confidence: 99%

Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three-dimensional indium oxide thick films

Yang

Liu

2016

EPL

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In three dimensional (3D) disordered metals, the electron-phonon (e-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (e-e) scattering rate 1/τϕ as a function of temperature T in 3D disordered metal has not been fully tested thus far, though it was proposed 40 years ago [A. Schmid, Z. Phys. 271, 251 (1974)]. We report here the simultaneous observation of small-and large-energy-transfer e-e scattering in 3D indium oxide thick films. In temperature region of T 100 K, the temperature dependence of resistivities curves of the films obey Bloch-Grüneisen law, indicating the films possess degenerate semiconductor characteristics in electrical transport property. In the low temperature regime, 1/τϕ as a function of T for each film can not be ascribed to e-ph scattering. To quantitatively describe the temperature behavior of 1/τϕ, both the 3D small-and large-energy-transfer e-e scattering processes should be considered (The small-and large-energy-transfer e-e scattering rates are proportional to T 3/2 and T 2 , respectively). In addition, the experimental prefactors of T 3/2 and T 2 are proportional to k −5/2 F ℓ −3/2 and E −1 F (kF is the Fermi wave number, ℓ is the electron elastic mean free path, and EF is the Fermi energy), respectively, which are completely consistent with the theoretical predications.Our experimental results fully demonstrate the validity of theoretical predications concerning both small-and large-energy-transfer e-e scattering rates.

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Demonstrating geometric phase acquisition in multi-path tunnel systems using a near-term quantum computer

Bhattacharyya

2021

Journal of Applied Physics

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Quantum computers have shown promise in simulating quantum many-body physics, even under the constraints that arise due to limitations in the number of qubits involved. Considering the effects of tunneling, backscattering and the accumulation of a geometric phase, we see the possibility of simulating weak anti-localization (WAL), in addition to the weak localization in a multi-path system. We show how a quantum simulator works through the construction of multiple scattering centers in closed paths and tunnel barriers yielding a large return probability (Pr) for electrons. A combination of inter- and intra-layer tunneling in a double-path circuit creates a phase reversal and subsequently the WAL effect. Incorporation of such arrangements of tunnel barriers can add a geometric phase and demonstrate Aharonov–Bohm-type Φ0 and Φ0/2 oscillations in a ring and a tube, respectively. Finally, the angle dependence of Pr shows a phase reversal in the two-path circuit caused by the inter-path resonance.

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Weak localization, Aharonov-Bohm oscillations, and decoherence in arrays of quantum dots

Cited by 4 publications

References 74 publications

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three-dimensional indium oxide thick films

Demonstrating geometric phase acquisition in multi-path tunnel systems using a near-term quantum computer

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