Demonstrating geometric phase acquisition in multi-path tunnel systems using a near-term quantum computer

Bhattacharyya, Shaman; Bhattacharyya, Somnath

doi:10.1063/5.0049728

Cited by 3 publications

(4 citation statements)

References 38 publications

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“…The purpose of the holonomic operation is to create a geometric phase through a closed loop, through multiple iterations. Dark states can be described as the bound states or the vortex core which arises from the strong spin–orbit coupling which results in weak (anti-) localization phenomena without breaking the time-reversal symmetry as observed in Figure 4 b [ 21 ]. This picture becomes very interesting for three vortices that can be controlled by a single operation.…”

Section: Discussionmentioning

confidence: 99%

“…Through the creation of two separate cycles on two separate qubits which are then concatenated, a geometric phase will be created [ 18 , 19 ]. However, there are very few attempts to show the holonomic control of three coupled qubits [ 20 , 21 , 22 , 23 ]. In particular, a method of performing holonomic control of three-qubit systems (three three-level Rydberg atoms) using a single holonomic gate is proposed; however, NV centers have specific energy levels of transition [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

“…A three-qubit system produces a similar effect to Rashba spin–orbit coupling (RSOC) and vortex structures in materials which are highlighted in the paper [ 26 , 27 , 28 ]. There have been attempts to acquire the geometric phase in a qubit circuit of IBM QE [ 21 , 29 , 30 , 31 ]. P r shown in Figure 1 b–e is defined as the probability of the desired state (most often, the initial state) after measurement.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of the Holonomically Controlled Non-Abelian Geometric Phase in a Three-Qubit System of a Nitrogen Vacancy Center

Bhattacharyya

2022

Entropy

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The holonomic approach to controlling (nitrogen-vacancy) NV-center qubits provides an elegant way of theoretically devising universal quantum gates that operate on qubits via calculable microwave pulses. There is, however, a lack of simulated results from the theory of holonomic control of quantum registers with more than two qubits describing the transition between the dark states. Considering this, we have been experimenting with the IBM Quantum Experience technology to determine the capabilities of simulating holonomic control of NV-centers for three qubits describing an eight-level system that produces a non-Abelian geometric phase. The tunability of the geometric phase via the detuning frequency is demonstrated through the high fidelity (~85%) of three-qubit off-resonant holonomic gates over the on-resonant ones. The transition between the dark states shows the alignment of the gate’s dark state with the qubit’s initial state hence decoherence of the multi-qubit system is well-controlled through a π/3 rotation.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Demonstration of the Holonomically Controlled Non-Abelian Geometric Phase in a Three-Qubit System of a Nitrogen Vacancy Center

Bhattacharyya

2022

Entropy

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“…Due to their unique properties of quantum superposition and entanglement, the silicon (Si) quantum bit (qubit) [1][2][3][4][5][6][7][8] has been considered as a potential elementary unit of future quantum computers [9,10], holding great promise for a variety of applications such as big data commutating [11,12], machine learning [13,14] and simulation of the multi-body quantum system [15,16]. Hereinto, the spin qubits in Si are considered to be ideal for quantum computation owing to their relatively longer spin-coherence time, which makes the implementation of quantum error correction schemes easier [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Transport spectroscopy from Hubbard bands of dopant-induced quantum dot array to one-dimensional conduction subband

Zhang¹,

Chen²,

Han³

et al. 2022

J. Phys. D: Appl. Phys.

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Arrays of dopant-induced quantum dots are a promising candidate as the quantum bit platform. We have achieved the quantum transport spectroscopy of a junctionless silicon (Si) nanowire transistor (JNT) with dual physical channels of diameter 10 nm fabricated by novel femtosecond laser projection exposure together with thermal oxidation. The spectroscopy demonstrates the evolution of the quantum transport process from Hubbard bands of dopant-induced quantum dot (QD) array to one-dimensional (1D) conduction subbands. Eight pairs of current splitting peaks were observed at the initial stage of the drain current, representing the upper and lower Hubbard bands formed by the coupling of eight QDs. The current oscillation peaks in the 1D conduction subband elucidate the interference of reflected electron waves between the gate-defined barriers, which are proved by the mean wave vector interval matching the gate length. Our experimental results demonstrate the evolution of the quantum transport process in sub-10-nm dual Si channels with randomly doped dopant atoms, opening a new perspective for quantum states by dopant band engineering in Si nanoscale devices for scalable quantum computation.

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Microstructure and Anisotropic Order Parameter of Boron-Doped Nanocrystalline Diamond Films

Bhattacharyya¹

2022

Crystals

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Unconventional superconductivity in heavily boron-doped nanocrystalline diamond films (HBDDF) produced a significant amount of interest. However, the exact pairing mechanism has not been understood due to a lack of understanding of crystal symmetry, which is broken at the grain boundaries. The superconducting order parameter (Δ) of HBDDF is believed to be anisotropic since boron atoms form a complex structure with carbon and introduce spin-orbit coupling to the diamond system. From ultra-high resolution transmission electron microscopy, the internal symmetry of the grain boundary structure of HBDDF is revealed, which can explain these films’ unconventional superconducting transport features. Here, we show the signature of the anisotropic Δ in HBDDF by breaking the structural symmetry in a layered microstructure, enabling a Rashba-type spin-orbit coupling. The superlattice-like structure in diamond describes a modulation that explains strong insulator peak features observed in temperature-dependent resistance, a transition of the magnetic field-dependent resistance, and their oscillatory, as well as angle-dependent, features. Overall, the interface states of the diamond films can be explained by the well-known Shockley model describing the layers connected by vortex-like structures, hence forming a topologically protected system.

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Demonstrating geometric phase acquisition in multi-path tunnel systems using a near-term quantum computer

Cited by 3 publications

References 38 publications

Demonstration of the Holonomically Controlled Non-Abelian Geometric Phase in a Three-Qubit System of a Nitrogen Vacancy Center

Demonstration of the Holonomically Controlled Non-Abelian Geometric Phase in a Three-Qubit System of a Nitrogen Vacancy Center

Transport spectroscopy from Hubbard bands of dopant-induced quantum dot array to one-dimensional conduction subband

Microstructure and Anisotropic Order Parameter of Boron-Doped Nanocrystalline Diamond Films

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