Wavelength-extended photovoltaic infrared photodetectors

Lao, Yan-Feng; Pitigala, P. K. D. D. P.; Perera, A. G. U.; Li, L. H.; Khanna, Suraj P.; Linfield, E. H.

doi:10.1063/1.4869958

Cited by 6 publications

(7 citation statements)

References 12 publications

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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The interest in Infrared and Ultraviolet detectors has increased immensely due to the emergence of important applications over a wide range of activities. Detectors based on free carrier absorption known as Hetero-junction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors and variations of these heterojunction structures to be used as intervalence band detectors for a wide wavelength region are presented. Although this internal photoemission concept is valid for all semiconductor materials systems, using a well studied III-V system of GaAs/Al x Ga 1−x As to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is also discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/Al x Ga 1−x As system is also presented. Superlattice detector technology, which is another promising detector architecture, can be optimized using both Type I and Type II heterostructures. Here the focus will be on Type II Strained Layer (T2SL) Superlattice detectors. T2SL Superlattices based on InAs/(In,GA)Sb have made significant improvements demonstrating focal plane arrays operating around 80K and with multiple band detection capability. A novel spectroscopic method to evaluate the band offsets of both heterojunction and superlattice detectors is also discussed.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

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Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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“…The photocurrent cancellation occurs in region I typically causing a zeroresponse point. 19 The image-force caused barrier lowering dominates the region II, corresponding to the linear variation of threshold energy versus (electric field) 1=2 . In the higher field region III, the hole tunneling through the barrier has the major influence on the threshold.…”

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confidence: 99%

“…For this reason, the response spectrum varies largely with the bias in the lowfield region (I), associated with the photocurrent cancellation effect. 19 At higher electric field, IPE in one direction dominates over the another. The IPE threshold is associated with the barrier height, and thus its variation is subject to the image-force caused barrier lowering 12 The electric field range is divided into three regions.…”

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Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Lao

Perera

Zhang

et al. 2014

Applied Physics Letters

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The GaAs/AlGaAs material system is believed to have a band offset without remarkable influence from the interface. We report here probing a slightly higher (5-10 meV) valence-band offset at the GaAs-on-Al 0.57 Ga 0.43 As interface compared to that of the Al 0.57 Ga 0.43 As-on-GaAs interface, by using internal photoemission spectroscopy. This indicates the non-commutativity of band offset for GaAs/AlGaAs, i.e., the dependence on the order of the growth of the layers. This result is consistently confirmed by observations at various experimental conditions including different applied biases and temperatures. V

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Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

Shevlyagin

Goroshko

Chusovitin

et al. 2015

Sci Rep

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By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3–4 and 15–20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

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Wavelength-extended photovoltaic infrared photodetectors

Cited by 6 publications

References 12 publications

Heterojunction and superlattice detectors for infrared to ultraviolet

Heterojunction and superlattice detectors for infrared to ultraviolet

Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

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