Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Lao, Yan-Feng; Perera, A. G. U.; Zhang, Y. H.; Wang, T. M.

doi:10.1063/1.4901040

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…5, the response of LH1002 is nearly the same for negative and positive biases. A prior investigation [10] of the band offset shows that the response threshold energies are consistent with the designed structural parameters. No response threshold extension is observed for sample LH1002.…”

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confidence: 96%

Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Lao

Perera

et al. 2016

Opt. Lett.

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ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.1 Mid-infrared photodetectors operating over an extended wavelength range up to 90 K H. Zhang and T M Wang AbstractWe report a wavelength threshold extension, from the designed value of 3.1 m to 8.9 m, in a p-type heterostructure photodetector. This is associated with the use of a graded barrier and barrier offset, and arises from hole-hole interactions in the detector absorber. Experiments show that using longpass filters to tune the energies of incident photons gives rise to changes in the intensity of the response. This demonstrates an alternative approach to achieving tuning of the photodetector response without the need to adjust the characteristic energy which is determined by the band structure.

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Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Lao

Perera

et al. 2016

Opt. Lett.

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“…GaAs/AlGaAs heterojunctions [3,13,16,17], PtSi-Si diode [18], Si/HfO2 interfaces [19], and a grapheneinsulator-semiconductor structures [10,11].…”

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Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy

Wolde

Chauhan

Somvanshi

et al. 2019

Infrared Physics & Technology

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In this work, the activation energy obtained from the temperature dependent internal photoemission spectroscopy (TDIPS) and thermionic dark currents using GaAs/AlGaAs photodetectors are compared. Different barrier heights within the p-type GaAs/AlGaAs heterostructures are studied. The temperature dependent spectral response shows the red-shifting of the detector threshold wavelength for increasing temperature due to the decreasing band-offset. The activation energy extracted from Arrhenius plot of the dark current-voltage-temperature (I-V-T), and measured spectral response show the carrier activation energy increases with increasing Al mole fraction and decreases with increasing doping density. For Infrared detectors with ≤ 6.5 m, the Arrhenius analysis yields the values of activation energy with less than 5 % deviation from the actual or TDIPS fitting values. However, for detectors with longer threshold wavelengths (>> λ.3 m), activation energy extracted from the Arrhenius plot leads to energy values which deviate more than ~ 10 % from the corresponding TDIPS values. The higher percentage deviation (>> 10 %) of activation energy determined by Arrhenius plot from the corresponding TDIPS values attribute to the temperature dependent Fermi distribution tailing effect and Fowler-Nordheim tunneling current.

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(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

et al. 2023

Journal of Alloys and Compounds

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Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Cited by 6 publications

References 18 publications

Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy

(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

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