Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

Abstract

Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with opened and shorted guard ring structure.

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity

“…In 2017, Napiah et al reported the development of a p-CMOS-type Si-APD using 0.18 µm CMOS technology. This device demonstrated a responsivity of 0.20 A/W at a bias voltage of 7.0 V and a wavelength of 405 nm [13]. In the same year, Xia et al utilized gradient boron doping technology to fabricate a highly sensitive silicon ultraviolet p+-i-n avalanche photodiode.…”

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

“…In [5]- [10], the Si photodiodes and photoreceivers were characterized only in 830 ∼ 850 nm wavelength region, and the maximum bandwidth of a few GHz and the maximum avalanche gain of more than 100 were achieved. We have also designed and realized avalanche photodiodes by standard CMOS process (CMOS-APD) and have characterized at 830 nm wavelength [11]- [14]. The avalanche gain of more than 100 was achieved at less than 10 V bias voltage, and the maximum bandwidth was 8.…”