Waveguide mode dynamics of blue laser diodes

Pindl, Markus; Schwarz, Uli

doi:10.1002/pssa.200565248

Cited by 8 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…LD with wider ridges typically show a richer mode dynamics, as do index guided ridge LDs in general when compared with gain guided oxide stripe LD. 23 Fig. 6 shows the evolution of the waveguide mode both with time and with increasing current.…”

Section: Mode Dynamicsmentioning

confidence: 98%

See 1 more Smart Citation

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

et al. 2006

View full text Add to dashboard Cite

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 µm narrow and a 10 µm wide ridge waveguide laser diode.

show abstract

Section: Mode Dynamicsmentioning

confidence: 98%

“…Topics studied so far with this setup are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. [20][21][22][23] We start in section two with the description of the time-resolved SNOM setup. In the third section the parameters for tube-etching of the SNOM fiber tips are given.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

et al. 2006

View full text Add to dashboard Cite

show abstract

“…The application of NSOM to the investigation of emission properties of GaN-based edge-emitting diode lasers on a nanoscopic scale has been pioneered by Schwarz et al [12][13][14]. These authors monitored the transition of the emission pattern from the near-to the far-field, and achieved a spatial resolution of 100 nm by using a fiber tip as nanoscopic detector.…”

Section: Introductionmentioning

confidence: 99%

Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

Friede

Tomm

Kühn

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along their front facets. The components of the 'optical active cavity', quantum wells, WGs, and cladding layers are individually inspected with a spatial resolution of ∼100 nm. Separate analysis of the p-and n-sections of the WG was achieved, and reveals defect levels in the p-part. Moreover, it is demonstrated that the homogeneity of the n-WG section directly affects the quantum wells that are grown on top of this layer. Substantially increased carrier capture efficiencies into InGaN/GaN-WGs compared to GaN-WGs are demonstrated.

show abstract

“…For broader ridges filaments build up, predicted by a large antiguiding-factor compared to other compounds [3]. Only few systematic theoretical [4,5] and experimental [6,7] investigations of filaments in (Al,In)GaN LDs are published.…”

mentioning

confidence: 97%

Spectral and time resolved scanning near‐field microscopy of broad area 405 nm InGaN laser diode dynamics

Braun

Meyer

Scholz

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

Ridge widths of GaN laser diodes (LDs) are typically in the order of few mm. In contrast to GaAs material systems, beam quality of GaN broad area lasers is still a critical point. By time resolved scanning near‐field optical microscopy (SNOM) on pulsed electrically pumped LDs with different ridge widths we observe dynamic features caused by thermal and carrier induced changes of the refractive index like filamentation and lateral mode competition, which strongly influence the far‐field of the LDs. Using a high spectral resolution spectrometer we can additionally resolve the individual longitudinal modes of the laser spectrum both time resolved and correlated to the lateral position in the waveguide. Especially on samples with broad ridges we observe complex spectral and spatial dynamics of the laser mode like different filaments lasing on different longitudinal mode combs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Waveguide mode dynamics of blue laser diodes

Cited by 8 publications

References 11 publications

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

Spectral and time resolved scanning near‐field microscopy of broad area 405 nm InGaN laser diode dynamics

Contact Info

Product

Resources

About