Spectral and time resolved scanning near‐field microscopy of broad area 405 nm InGaN laser diode dynamics

Braun, Heinrich; Meyer, Tobias; Scholz, Dominik; Schwarz, Ulrich; Brüninghoff, Stefanie; Lell, A.; Strauß, Uwe

doi:10.1002/pssc.200778416

Cited by 3 publications

References 15 publications

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Fast self-heating in GaN-based laser diodes

Scheibenzuber¹,

Schwarz²

2011

Applied Physics Letters

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We study the time evolution of the internal temperature of GaN-based laser diodes in pulsed operation using time resolved spectroscopy. Time dependent emission spectra are compared to continuous-wave measurements at different temperatures to relate changes in the longitudinal mode spectrum to the internal temperature. From the different shift in emission center and longitudinal modes, two subsystems are identified which heat up on different time scales: the charge carrier plasma and the crystal lattice. While the lattice takes several microseconds to reach thermal equilibrium, the plasma heats up within 20 ns after the onset of the electrical pulse. This behavior is attributed to the small heat capacity of the charge carrier plasma compared to the crystal lattice

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Fast self-heating in GaN-based laser diodes

Scheibenzuber¹,

Schwarz²

2011

Applied Physics Letters

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Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation

Redaelli

Wenzel

Piprek³

et al. 2015

IEEE J. Quantum Electron.

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The threshold current density of narrow (1.5 µm) ridgewaveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can be attributed to strong index-antiguiding. A value of the antiguiding factor R = 10 is experimentally determined near threshold by measurements of the current-dependent gain and refractive index spectra. The device performances are simulated self-consistently solving the Schrödinger-Poisson equations and the equations for charge transport and waveguiding. Assuming a carrier-induced index change which matches the experimentally determined antiguiding factor, both the measured high threshold current and the shape of the far-field pattern of lasers with shallow ridges can be reproduced theoretically.

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