Waveguide integrated InP-based photodetector for 100Gbaud applications operating at wavelengths of 1310nm and 1550nm

Runge, Patrick; Zhou, Gan; Ganzer, Felix; Mutschall, Sven; Seeger, A.

doi:10.1109/ecoc.2015.7341912

Cited by 18 publications

(3 citation statements)

References 8 publications

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“…In 2013, a packaged WGPD integrated with a verticallytapered spotsize converter and a 1 × 4 MMI coupler was fabricated [39] ; this device was composed of an array of 4 PDs in order to increase the saturation current and it had 30 GHz 3 dB bandwidth and high output power of 7.5 dBm at 20 GHz. In the same year, a PD with above 90 GHz 3 dB bandwidth was demonstrated [40] . In Ref.…”

Section: Research Hotspots Of Photodetectorsmentioning

confidence: 97%

High-speed photodetectors in optical communication system

Zhao

Liu

et al. 2017

J. Semicond.

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This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.

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Section: Research Hotspots Of Photodetectorsmentioning

confidence: 97%

High-speed photodetectors in optical communication system

Zhao

Liu

et al. 2017

J. Semicond.

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“…The capacity of network systems that require state-of-the-art pin photodiodes (pin-PDs) is now approaching 800 Gbit/s, which uses a baud rate of 100 Gbaud. Studies on such high-speed pin-PDs for 100-Gbaud operation were conducted but used a waveguide structure [17,18]. Our approach is developing such high-speed pin-PDs with a vertical illumination structure [19].…”

Section: Inverted P-down Pin Photodiodes (Pin-pds)mentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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“…2. For example, Zhou et al [16] proposed a waveguideintegrated PIN-PD based on the research of Runge et al [22] and obtained a linear photocurrent of 17 mA with an RF output power of +4.6 dBm at 20 GHz. Itakura et al [13] demonstrated a backside-illuminated PIN-PD using AlN flip-chip bonding with a 70 μm junction diameter and 0.8 μm thick intrinsic layer.…”

Section: Introductionmentioning

confidence: 99%

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams' thermal model. Simulations and measurements of the photocurrent in the linear region, 3-dB bandwidth and thermal analyses were conducted. We found a good agreement between the measured photocurrent and simulations. The measured linear photocurrent of PIN-PD with 50 μm substrate and 0.4 μm absorber was 28 mA at -2 V, which was related to the expected RF output power of +13 dBm at 50 GHz. In addition, thermal analyses evaluated the junction temperature corresponding to the specific measured photocurrent, as well as the 431 K for junction breakdown temperature of the fabricated PD samples. This evaluation further predicted that this type of PIN-PD would reach the thermal breakdown point when the photocurrent was 34 mA at -2 V. Furthermore, with the application of AlN flip-chip bonding, the linear and expected maximum photocurrent were improved to 30 mA and 45 mA, respectively. Finally, we predicted the PD temperature and maximum photocurrent of 55 mA using AlN instead of InP as the main substrate.INDEX TERMS breakdown prediction, high linear photocurrent, PIN-PD, thermal analyses

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Waveguide integrated InP-based photodetector for 100Gbaud applications operating at wavelengths of 1310nm and 1550nm

Abstract: We demonstrate a waveguide integrated pin-photodetector chip for 100Gbaud applications operating from the O-band to the L-band. By means of the photodetector chip 3rd order interception point measurements at highest reported frequencies up to 130GHz are presented

Cited by 18 publications

References 8 publications

High-speed photodetectors in optical communication system

High-speed photodetectors in optical communication system

Inverted p-down Design for High-Speed Photodetectors

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

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