Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process
Yaofeng Yi,
Toshimasa Umezawa,
Kouichi Akahane
et al.
Abstract:We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams' thermal model. Simulations and measurements of the photocurrent in the linear region, 3-dB bandwidth and thermal analyses were conducted. We found a good agreement between the measured photocurrent and simulations. The measured linear photocurrent of PIN-PD with 50 μm substrate and 0.4 μm absorber was 28 mA at -2 V, which was related to the expected… Show more
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