Wave-mixing effects on electronic noise in semiconductors

Abstract

The results of a Monte Carlo analysis of hotelectron intrinsic noise in a n-type GaAs bulk driven by two mixed large-amplitude alternating electric fields having frequency in the subterahertz range are presented. The noise properties are investigated by studying the velocity autocorrelation function and the noise spectrum. We explored the relations among the frequency response and the velocity fluctuations as a function of the frequencies and intensities of the mixed fields. When the semiconductor is driven by two mixed ciclostationary electric fields, a resonant-like enhancement of the spectra near the two frequencies of the applied fields is found.

External Noise Effects in Silicon MOS Inversion Layer

“…For this reason, in order to fully understand the complex scenario of nonlinear phenomena involved in the devices response, several studies have investigated the hot-electron transport dinamics in bulk and semiconductor structures by analyzing the electronic noise in systems driven by external static or oscillating electric fields [1][2][3][4][5][6][7][8][9][10][11][12].…”

External Noise Effects on the Electron Velocity Fluctuations in Semiconductors

“…The spectral density of the electron velocity fluctuations in a n-type GaAs bulk undergoes critical modifications under the action of two mixed highfrequency large-amplitude periodic electric fields [1][2][3]. In particular, recent studies based on Monte Carlo simulations have shown that the total power of the intrinsic noise is very sensitive to the amplitude and the frequency of the excitation signals and that wave-mixing conditions may give rise to a mere redistribution, an enhancement or a suppression of the noise level, depending on the constructive interplay between the two excitation fields.…”