External Noise Effects in Silicon MOS Inversion Layer

Lodato, Maria Antonietta; Adorno, Dominique Persano; Pizzolato, Nicola; Spezia, Stefano; Spagnolo, Bernardo

doi:10.5506/aphyspolb.44.1163

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…In the last decades, great interest has been oriented towards the noiseinduced phenomena in nonlinear complex systems, such as conduction electrons inside semiconductor structures [45]. Noise enhanced stability [46][47][48] in the electron transport inside GaAs bulks, caused by the addition of external fluctuations to the driving oscillating electric field, has been reported in Refs.…”

Section: Spin Polarised Transportmentioning

confidence: 99%

Noise-induced effects in nonlinear relaxation of condensed matter systems

Spagnolo

Valenti²,

Guarcello

et al. 2015

Chaos, Solitons & Fractals

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120

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Section: Spin Polarised Transportmentioning

confidence: 99%

Noise-induced effects in nonlinear relaxation of condensed matter systems

Spagnolo

Valenti²,

Guarcello

et al. 2015

Chaos, Solitons & Fractals

Self Cite

120

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“…As a matter of fact, most investigations have been oriented towards the possible positive eects of noise on nonlinear systems since several theoretical studies have revealed that, under specific conditions, the addition of external fluctuations to intrinsically noisy systems may induce an increase of the dynamical stability of the system, resulting in a less noisy response [28][29][30][31][32][33][34][35][36][37][38][39][40]. This counterintuitive eect is universal and, under suitable conditions, it has been found in dierent physical areas, ranging from the generation of spin currents [41], the enhancement of electron spin decoherence times and lengths [42,43], the aggregation kinetics of Brownian particles [21,25], the translocation dynamics of polymers [44,45], the ultra-fast magnetization dynamics of magnetic spin systems [46,47], to the noise redistribution in quasi 2D silicon MOS inversion layers [48].…”

Section: Introductionmentioning

confidence: 99%

Noise-induced resonance-like phenomena in InP crystals embedded in fluctuating electric fields

Adorno¹,

Pizzolato²,

Spagnolo³

2016

J. Stat. Mech.

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We explore and discuss the complex electron dynamics inside a lowdoped n-type InP bulk embedded in a sub-THz electric field, fluctuating for the superimposition of an external source of Gaussian correlated noise. The results presented in this study derive from numerical simulations obtained by means of a multi-valley Monte Carlo approach to simulate the nonlinear transport of electrons inside the semiconductor crystal. The electronic noise characteristics are statistically investigated by calculating the correlation function of the velocity fluctuations, its spectral density and the integrated spectral density, i.e. the total noise power, for dierent values of both amplitude and frequency of the driving oscillating electric field and for dierent correlation times of the field fluctuations. Our results show that the nonlinear response of electrons is strongly aected by the field fluctuations. In particular, crucially depending on the relationship between the correlation times of the external Gaussian noise and the timescales of complex phenomena involved in the electron dynamical behavior: (i) electrons self-organize among dierent valleys, giving rise to intrinsic noise suppression; (ii) this cooperative behavior causes the appearance of a resonance-like phenomenon in the noise spectra.

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“…This counterintuitive effect has been found in different physical areas, ranging from the generation of spin currents [29], aggregation kinetics of Brownian particles [30,31], chemical reaction system [32], translocation dynamics of polymers [33][34][35], ultra-fast magnetization dynamics of magnetic spin systems [36,37], dynamic electron response in zinc-blende semiconductor crystals [38][39][40][41][42][43], noise redistribution in quasi 2D Silicon Mos inversion layers [44], to interdisciplinary physical models [45][46][47][48][49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear Relaxation Phenomena in Metastable Condensed Matter Systems

Spagnolo

Guarcello

Magazzù

et al. 2016

Entropy

100

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Nonlinear relaxation phenomena in three different systems of condensed matter are investigated. (i) First, the phase dynamics in Josephson junctions is analyzed. Specifically, a superconductor-graphene-superconductor (SGS) system exhibits quantum metastable states, and the average escape time from these metastable states in the presence of Gaussian and correlated fluctuations is calculated, accounting for variations in the the noise source intensity and the bias frequency. Moreover, the transient dynamics of a long-overlap Josephson junction (JJ) subject to thermal fluctuations and non-Gaussian noise sources is investigated. Noise induced phenomena are observed, such as the noise enhanced stability and the stochastic resonant activation. (ii) Second, the electron spin relaxation process in a n-type GaAs bulk driven by a fluctuating electric field is investigated. In particular, by using a Monte Carlo approach, we study the influence of a random telegraph noise on the spin polarized transport. Our findings show the possibility to raise the spin relaxation length by increasing the amplitude of the external fluctuations. Moreover, we find that, crucially, depending on the value of the external field strength, the electron spin depolarization length versus the noise correlation time increases up to a plateau. (iii) Finally, the stabilization of quantum metastable states by dissipation is presented. Normally, quantum fluctuations enhance the escape from metastable states in the presence of dissipation. We show that dissipation can enhance the stability of a quantum metastable system, consisting of a particle moving in a strongly asymmetric double well potential, interacting with a thermal bath. We find that the escape time from the metastable region has a nonmonotonic behavior versus the system-bath coupling and the temperature, producing a stabilizing effect.Keywords: metastability; nonequilibrium statistical mechanics and nonlinear relaxation time; noise enhanced stability; Josephson junction; spin polarized transport in semiconductors; open quantum systems; quantum noise enhanced stability

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External Noise Effects in Silicon MOS Inversion Layer

Cited by 4 publications

References 29 publications

Noise-induced effects in nonlinear relaxation of condensed matter systems

Noise-induced effects in nonlinear relaxation of condensed matter systems

Noise-induced resonance-like phenomena in InP crystals embedded in fluctuating electric fields

Nonlinear Relaxation Phenomena in Metastable Condensed Matter Systems

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