Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Heo, Jae Sang; Jo, Jeong Wan; Kang, Jingu; Jeong, Chan Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck In; Kim, Jaekyun; Kim, Yong Hoon; Kim, Myung Gil; Park, Sung Kyu

doi:10.1021/acsami.5b12819

Cited by 58 publications

(29 citation statements)

References 59 publications

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“…The same group subsequently demonstrated that combining H 2 O mediation with DUV irradiation achieved better device performance than single DUV annealing due to a more complete M–O–M lattice formation and lower oxygen vacancy content in the oxide films …”

Section: Low Temperature Routes For Flexible and Printed High κ Oxidementioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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Section: Low Temperature Routes For Flexible and Printed High κ Oxidementioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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“…However, in order to realize high definition, high frame-rate displays, and the relevant driving circuitry, the carrier mobility must be further improved while exhibiting good operational stability. For these reasons, various metal-oxide semiconductors [ 7 , 8 ], gate dielectrics [ 9 , 10 ], novel device structures [ 11 , 12 ], and post treatments [ 13 , 14 ] have been proposed to enhance the carrier mobility of these devices. Among the various approaches in achieving high mobility metal-oxide TFTs, using an ionic-type gate dielectric is a promising method of achieving both the high mobility and low voltage operation characteristics [ 15 , 16 , 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Heo

Choi

et al. 2017

Materials

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In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

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“…During the proton irradiation, there was a clear decrease in the M‐O‐M lattice peak (529.70–530.97 eV) and significant increases in the M‐O vac ‐M (530.59–531.73 eV) and M‐O‐H (531.70–532.60 eV) peaks. As mentioned above, the high‐energy proton collision with the metal‐oxide lattice could induce the formation of oxygen vacancies, which remain as deep traps or shallow donor states, or which could subsequently generate hydroxides as a result of adsorbing water into the vacancies . The smaller oxygen vacancy generation energy within In 2 O 3 than in ZnO afforded the most significant reduction in the M‐O‐M peak with large M‐O vac ‐M and M‐O‐H peaks (Figure b) .…”

Section: Resultsmentioning

confidence: 92%

Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors

Park

Kwon

et al. 2018

Adv Funct Materials

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The effect of 5 MeV high-energy proton irradiation on solution-processed metal-oxide thin-film transistors (TFTs) is investigated. The electrical characteristics of the devices are measured before and after proton irradiation with radiation doses of 10 13 , 10 14 , and 10 15 cm −2 . TFTs based on zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) exhibit a significant negative shift in their threshold voltage values (ΔV th ≤ −30 V) or transitioned to the conductor state as the proton radiation dose increased. For a-ZnO and IGZO, this change in the electrical characteristics originates from the formation of proton-irradiation-induced oxygen vacancies in the metaloxide semiconductor layer. On the other hand, amorphous zinc tin oxide devices with an optimized composition exhibit relatively stable electrical characteristics when subjected to proton irradiation. Furthermore, the backchannel passivation of oxide-semiconductor TFTs with an n-type organic semiconductor layer significantly improves the device stability under proton irradiation. This study demonstrates that solution-processed metal-oxide semiconductors have significant potential as rad-hard large area electronic devices for nuclear and aerospace applications.

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Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Cited by 58 publications

References 59 publications

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors

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