Water enrichment/depletion of amorphous carbon coatings probed by temperature-dependent dc electrical conductivity and Raman scattering

Characterization of inhomogeneity at edges of graphene oxide films using tip‐enhanced Raman spectroscopy

“…[23] Based on these results, we believe that the graphite network structures are broken down at the edges of the GO plane, resulting in the high I D /I G ratio, and the dangling bonds are mainly terminated by C-H or C-O, O-H, and COOgroups dissociated from H 2 O molecules in an atmosphere. [5,30] We believe that inhomogeneous nanoscale structures or defects are formed at the edge or step-terrace of the GO plane owing to these chemical bonds. These inhomogeneous nanoscale structures or defects can reduce the electrical conductivity of flexible electronic devices, such as smartphones and tablets.…”

“…[ 23 ] Based on these results, we believe that the graphite network structures are broken down at the edges of the GO plane, resulting in the high I D / I G ratio, and the dangling bonds are mainly terminated by C‐H or C‐O, O‐H, and COO‐ groups dissociated from H 2 O molecules in an atmosphere. [ 5,30 ]…”

“…These inhomogeneous nanoscale structures or defects can reduce the electrical conductivity of flexible electronic devices, such as smartphones and tablets. [ 30 ] As indicated by these examples, AFM–Raman spectroscopy is an excellent technique for characterizing CNTs, graphene, and GO nanostructures.…”

Anti-Stokes Raman scattering in amorphous carbon thin films

“…Random orientation of graphite-like crystals leads to a porous structure of a carbon film with a high concentration of defects (on the order of 10 17 -10 20 cm -3 ) [1]. It was shown that, under normal conditions, edge and internal defects of carbon fragments easily interact with water molecules from the environment [2]. This leads to the enrichment of the carbon layer with hydrogen and oxygen-containing groups.…”

Антистоксово Комбинационное Рассеяние Света В Тонких Пленках Аморфного Углерода

“…Случайная ориентация графитоподобных кристаллов приводит к пористой структуре углеродной пленки с высокой концентрацией дефектов (порядка 10 17 -10 20 см -3 ) [1]. Было показано, что при нормальных условиях краевые и внутренние дефекты углеродных фрагментов легко взаимодействуют с молекулами воды из окружающей среды [2]. Это приводит к обогащению углеродного слоя водород-и кислородсодержащими группами.…”