Characterization of inhomogeneity at edges of graphene oxide films using tip‐enhanced Raman spectroscopy

Abstract

We developed a reflection‐type tip‐enhanced Raman spectroscopy system with a high spatial resolution to be able to apply for many kinds of opaque samples and obtained Raman images and Raman spectra at the edges of graphene oxide (GO) films using this system. We found that the relative intensity of the D band to the G band (ID/IG) increased 0.6 to 1.5 at the edges of the GO plane and the C‐H stretching mode at approximately 2920 cm−1 was strongly observed at the edges. These results suggest that the graphite network structures are broken down at the edges of the GO plane, resulting in the high ID/IG ratio, and the dangling bonds are mainly terminated by C‐H, C‐O, O‐H, and/or COO‐ groups.

Sequential chiral induction between organic and inorganic supramolecular helical assemblies for the in situ formation of chiral carbon dots

“…28 The Raman spectrum is very similar to the one observed for graphene oxide materials. 29 The 2D fluorescence spectra of CDots@SNHs dispersed in H 2 O are shown in Fig. S4 (ESI †).…”