WastePlan model implementation for New York State. Final report

Abstract

Portions of this document may be illegible in electronic image products. Images are produced from the best available original document WastePlu is a computer software tool that models solid waste quantities, costs, and other parameters on a regional basis. The software was developed by the Tellus Institute, a non-profit research and consulting firm. The project's objective was to provide local solid waste management planners in New York State responsible to develop and implement comprehensive solid waste management plans authorized by the Solid Waste Management Act of 1988, with a WastePlap model specifically tailored to fit the demographic and other characteristics of New York State and to provide training and technical support to the users. Two-day workshops were held in 1992 to introduce planners to the existing versions; subsequently, extensive changes were made to the model and a second set of two-day workshops were held in 1993 to introduct planners to the enhanced version of Wasteplan. Following user evaluations, Wasteplan was further modified to allow users to model systems using a simplified version, and to incorporate report forms required by New York State. A post-project survey of trainees revealed limited regular use of software. Possible reasons include lack of synchronicity w i t h NYSDEC planning process; lack of computer literacy and aptitude among trainees; hardware limitations; s o h a r e user-friendliness; and the work environment of the trainees. A number of recommendations are made to encourage use of Wasteplan by local solid waste management planners.

Barrier and Copper Seedlayer Wet Etching

“…The copper seed layer etching is achieved with a low cost chemistry, permitting a tight control of the etch rate versus time [1], [2]. The most important challenge is the TiN barrier layer etching.…”

“…Moreover, Ti and TiN etching rates are very low and not adapted to a single wafer tool approach. Some other SC1 solutions with various additives like TMAH, EDTA were used during the development phase [1] The processes have been developed with a fresh chemistry approach to determine etch rate and selectivity. The preliminary tests have been performed on full sheet wafers: 1000Å PVD copper layer and CVD bi-layer with 500Å TiN on 100Å Ti.…”