Wafer‐Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

Abstract

The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

“…The realization of such a template was achieved by the strain engineering of single crystalline layers, as recently demonstrated. 21 Although the fabrication of this MJSC involves expensive materials, its cost can be significantly decreased by performing multiple templates' growth using one bulk substrate combined with the epitaxial lift-off technique.…”

Film Flip and Transfer Process to Enhance Light Harvesting in Ultrathin Absorber Films on Specular Back‐Reflectors

“…A silver-gold alloy with 90 at% silver and 10 at% gold was found to present an optimal balance between stability and reflectivity. [19][20][21][22][23][24][25][26][27][28] In these studies, a range of Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular backreflectors. The silver-gold alloy layer was utilized both as a back-reflector as well as a back metallic contact.…”

Effect of reduced dimensionality on the optical band gap of SrTiO3

“…2,3 Improved fundamental understanding of the effect of systematic structural perturbations on the band gap and related optical and electrical properties of common structures can lead to the discovery of routes that tune electronic structure in desirable ways. Chemical substitution, 4-8 biaxial strain, [9][10][11][12] and incorporation into a superlattice 13 have been reported to effectively modify the optical band gap of semiconductors and functional oxides.…”