2013
DOI: 10.1063/1.4798241
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Effect of reduced dimensionality on the optical band gap of SrTiO3

Abstract: Atomic and electronic structure of the YBa 2 Cu 3 O 7 / SrTiO 3 interface from first principles

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Cited by 52 publications
(37 citation statements)
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“…There are some exceptions to this trend, like Sr n+1 Ti n O 3n+1 . Lee et al [37] have recently shown that bandgaps of the Sr n+1 Ti n O 3n+1 Ruddlesden-Popper phase is reduced with an increase of the thickness and we have seen the same effect. In general, these trends could be used to tune the bandgap by increasing or reducing the number of octahedra within the layers.…”
Section: Trends In Stability and Bandgapssupporting
confidence: 83%
“…There are some exceptions to this trend, like Sr n+1 Ti n O 3n+1 . Lee et al [37] have recently shown that bandgaps of the Sr n+1 Ti n O 3n+1 Ruddlesden-Popper phase is reduced with an increase of the thickness and we have seen the same effect. In general, these trends could be used to tune the bandgap by increasing or reducing the number of octahedra within the layers.…”
Section: Trends In Stability and Bandgapssupporting
confidence: 83%
“…4(a), in which gaps increase with increasing thickness of the SrTiO 3 region, runs opposite to typical trends in the band gaps of quantum confined systems, as for example previously observed for the Ruddlesden-Popper series Sr n+1 Ti n O 3n+1 . 13 This can be explained by observing that the VBM, the band edge whose energies vary with layering, resides not in the SrTiO 3 region but in the SrFeO 2.5 layer. Therefore, when n is large (i.e., SrTiO 3 regions are less confined), VBM states are actually more confined because SrFeO 2.5 layers are farther apart.…”
Section: -4mentioning
confidence: 99%
“…Past work has explored a variety of routes to tune the band gap and edges of SrTiO 3 , including chemical doping and substitution, [5][6][7][8][9][10][11] epitaxial strain, 12 and quantum confinement. 13 Layered oxide thin films, usually grown by molecular beam epitaxy 14 or pulsed laser deposition, 15 can tune electronic structure via quantum confinement and geometric distortions not found in the bulk components. [16][17][18] Further, control of oxygen vacancies via electrolytic gating has been shown to dramatically and reversibly alter the electronic properties of SrTiO 3 19 and other oxide films.…”
mentioning
confidence: 99%
“…Some alignment of these faults has been observed previously in non-stoichiometric Sr 1þd TiO x samples deposited through source shuttering at 650 C. 34 Of course, deliberately shuttering extra SrO planes into stoichiometric SrTiO 3 is an effective way of introducing RP faults along the growth direction, 24,44 and has been used to make Sr nþ1 Ti n O 3nþ1 phases with n as high as 10. 45 Such a method is not employed, however, in the work described here. Partial orientation of RP faults has also been attributed to composition changes achieved through controlling laser fluence in PLD.…”
mentioning
confidence: 99%