“…In this paper we demonstrate 2D nanostructured materials that can be integrated directly into silicon NEMS using a parallel fabrication process, sidewall transfer lithography (STL). STL was developed to overcome resolution limits in microelectronics [48,49], but has since been modified to fabricate optics [50,51], field emission devices [52], nanowires [53,54], nanoimprint templates [55,56], photomasks [57] and nanochannels [58]. We ourselves have used it to fabricate single crystal NEMS [59,60], by DRIE of bonded siliconon-insulator (BSOI) [61,62].…”