Wafer quality analysis of various scribe line mark designs

Zhou, Jianming; Hickman, Craig R.; He, Yuan; Light, Scott; Lamonds, Lucas; Devilliers, Anton

doi:10.1117/12.881551

Cited by 4 publications

(2 citation statements)

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“…The well-used grating marks in ASML scanner include AH11, AH32, AH53 and AH74, which the grating period is 16 μm or 17.6 μm [7]. According to the optical theory, higher diffraction order brings more precise alignment accuracy.…”

Section: Introductionmentioning

confidence: 99%

New alignment mark designs in single patterning and self-aligned double patterning

Zhang

Dong

et al. 2017

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

New alignment mark designs in single patterning and self-aligned double patterning

Zhang

Dong

et al. 2017

Microelectronic Engineering

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“…In this case, the diffraction efficiency supported by the 5th order light signal is rather inadequate for a robust positioning. A segmented phase grating structure is designed to improve the light signals received at high odd orders [ 13 , 14 , 15 , 16 , 17 ]. For the 5th order, the grating ridge is further equally divided into five parts, as three ridges and two grooves, which is labeled as AH53 by taking the naming rule in [ 15 ] (p. 854).…”

Section: Introductionmentioning

confidence: 99%

Analytic Design of Segmented Phase Grating for Optical Sensing in High-Precision Alignment System

Yang

Wang

et al. 2021

Sensors

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Ultra-precision measurement systems are important for semiconductor manufacturing processes. In a phase grating sensing alignment (PGA) system, the measurement accuracy largely depends on the intensity of the diffraction signal and its signal-to-noise ratio (SNR), both of which are associated with the grating structure. Although an equally segmented grating structure could increase the signal of a high odd order, it could also strengthen the signals at the zeroth and even orders which are the main contributors of stray light. This paper focuses on the practical problem of differently responding diffraction orders but in one grating structure. An analytical relationship has been established between the diffraction efficiency and the segment structure of phase grating. According to this analytic model, we then propose a design method to increase the diffraction signal at high odd orders and, meanwhile, to decrease it at the zeroth and even orders. The proposed method provides a fast and effective way to obtain the globally optimal grating structure in the valid scope. Furthermore, the design examples are also verified by means of numerical simulation tool–rigorous coupled-wave analysis (RCWA) software. As a result, the proposed method gives insight into the diffraction theory of segmented grating and the practical value to greatly improve the design efficiency.

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Characteristic study of image-based alignment for increasing accuracy in lithography application

Dong

Wei

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Image-based overlay and alignment is an effective technology for finding wafer positions precisely. Methods to increase the alignment accuracy and decrease the alignment tolerance for the lithography application are important and challenging, which need more study to consider the problems in a broader context. In view of this, the inner characteristics of image-based alignment are investigated in this paper by studying the case with phase difference only as well as the case with both power and phase differences. Based on the study, the authors propose some recommendable conclusions. For the case with phase difference only, the mark period should be about four times of optical spot size, the light spot size needs to be minimized for higher resolution, and the subwavelength alignment mark is not recommended to use due to its larger cross-correlation curve width. By contrast, for the case that both power and phase differences exist in application, subwavelength property has great advantages in choosing the best alignment reference waveform and higher robustness to handle the edge profile and mark thickness variation. In reality, the measured waveforms can be changed easily due to the thickness variation of the films above the alignment mark, which may cause center position finding error. The authors suggest that it is necessary to establish a reference waveform library with all kinds of shapes, through comparing all maximal cross-correlation values with the real waveform to find the best reference one and the center position. The authors believe image-based alignment method will play an important role in advanced lithography node for its robustness for most kinds of film stacks.

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Wafer quality analysis of various scribe line mark designs

Cited by 4 publications

References 0 publications

New alignment mark designs in single patterning and self-aligned double patterning

New alignment mark designs in single patterning and self-aligned double patterning

Analytic Design of Segmented Phase Grating for Optical Sensing in High-Precision Alignment System

Characteristic study of image-based alignment for increasing accuracy in lithography application

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