Wafer-level reliability characterization for wafer-level-packaged microbolometer with ultrasmall array size

Yang, Chung Mo; Jung, Ho; Park, Jae Hong; Kim, Hee Yeoun

doi:10.1007/s00542-014-2072-4

Cited by 9 publications

(6 citation statements)

References 5 publications

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“…In addition, the Cu ring in the cap substrate maintained an intact line shape after bonding, verifying that no reflow had occurred. The excellent bonding strength in combination with the small sealing ring footprint achieved here enables further miniaturization of vacuum packages compared to alternative metal-based vacuum packaging techniques, which use sealing rings that are typically at least 100 µm wide [13], [14], [16], [18], [22], [23], [25], [33], [36], [37], [39].…”

Section: Shear Strength Testingmentioning

confidence: 99%

“…Various metal-based wafer-level hermetic packaging methods have been proposed, including solder bonding [11]- [14], eutectic bonding [15]- [18], solid-liquid inter-diffusion (SLID) bonding [13], [19], [20], surface activated bonding (SAB) [21], and thermo-compression bonding [22]- [27]. All these technologies have individual advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

“…All these technologies have individual advantages and disadvantages. Drawbacks of solder bonding and eutectic bonding are that the melting of solder metals and alloys can cause reflow problems, and to ensure sufficient hermeticity and bond strength, the sealing ring widths typically are more than 100 µm [13], [14], [16], [18]. For SLID bonding, voids can occur in the intermetallic compound layer, and special care has to be taken in designing the sealing layer thickness and in controlling the temperature ramping during bonding to get uniform and strong bonds [19], [20], [28].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Wafer-Level Vacuum Packaging Enabled by Plastic Deformation and Low-Temperature Welding of Copper Sealing Rings With a Small Footprint

Wang

Bleiker

Antelius

et al. 2017

J. Microelectromech. Syst.

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Section: Shear Strength Testingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wafer-Level Vacuum Packaging Enabled by Plastic Deformation and Low-Temperature Welding of Copper Sealing Rings With a Small Footprint

Wang

Bleiker

Antelius

et al. 2017

J. Microelectromech. Syst.

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“…Figure 9 shows the change of resistance of a microbolometer over time under controlled vacuum conditions. The measurement systems and evaluation methods were presented in detail in previous reports [ 25 , 26 ]. The degree of vacuum affects the heat transfer of the microbolometer.…”

Section: Resultsmentioning

confidence: 99%

“…The bonding strength was measured using five specimens for each condition using a shear tester (Dage 4000, Dage Precision Industries, Cambridgeshire, UK). The thermoelectric characteristics of the microbolometer test pixel were evaluated using a probe station (M6VC, MSTECH, Hwasung, Korea), as described in previous reports [ 25 , 26 ].…”

Section: Methodsmentioning

confidence: 99%

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

et al. 2023

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Most microsensors are composed of devices and covers. Due to the complicated structure of the cover and various other requirements, it difficult to use wafer-level packaging with such microsensors. In particular, for monolithic microsensors combined with read-out ICs, the available process margins are further reduced due to the thermal and mechanical effects applied to IC wafers during the packaging process. This research proposes a low-temperature, wafer-level vacuum packaging technology based on Cu-Sn bonding and nano-multilayer getter materials for use with microbolometers. In Cu-Sn bonding, the Cu/Cu3Sn/Cu microstructure required to ensure reliability can be obtained by optimizing the bonding temperature, pressure, and time. The Zr-Ti-Ru based nanomultilayer getter coating inside the cap wafer with high step height has been improved by self-aligned shadow masking. The device pad, composed of bonded wafer, was opened by wafer grinding, and the thermoelectrical properties were evaluated at the wafer-level. The bonding strength and vacuum level were characterized by a shear test and thermoelectrical test using microbolometer test pixels. The vacuum level of the packaged samples showed very narrow distribution near 50 mTorr. This wafer-level packaging platform could be very useful for sensor development whereby high reliability and excellent mechanical/optical performance are both required. Due to its reliability and the low material cost and bonding temperature, this wafer-based packaging approach is suitable for commercial applications.

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Analysis of the Application of Uncooled and Cooled Infrared Detection Technology in Intelligent Vehicles

Wang,

Fang,

Zhu

et al. 2023

Proceedings of the 28th International Cryogenic Engineering Conference and International Cryogenic Materials Conference 2022

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Wafer-level reliability characterization for wafer-level-packaged microbolometer with ultrasmall array size

Cited by 9 publications

References 5 publications

Wafer-Level Vacuum Packaging Enabled by Plastic Deformation and Low-Temperature Welding of Copper Sealing Rings With a Small Footprint

Wafer-Level Vacuum Packaging Enabled by Plastic Deformation and Low-Temperature Welding of Copper Sealing Rings With a Small Footprint

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

Analysis of the Application of Uncooled and Cooled Infrared Detection Technology in Intelligent Vehicles

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