Wafer-level MEMS packaging via thermally released metal-organic membranes

Monajemi, P.; Joseph, P. J. Amal; Kohl, Paul A.; Ayazi, Farrokh

doi:10.1088/0960-1317/16/4/010

Cited by 53 publications

(35 citation statements)

References 26 publications

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“…5(a), where the displacement of the proof mass is recorded in response to a broadband force impulse of 1-μs duration. In this experiment, the integrated sensor is placed in a reduced pressure environment (∼100 mtorr) to realize the high Q resonance condition that could be characteristic of silicon structures vacuum packaged at the wafer level [13], [14]. The FFT of the trace in Fig.…”

Section: Resultsmentioning

confidence: 99%

Micromachined Accelerometers With Optical Interferometric Read-Out and Integrated Electrostatic Actuation

Hall

Okandan

Littrell

et al. 2008

J. Microelectromech. Syst.

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A micromachined accelerometer device structure with diffraction-based optical detection and integrated electrostatic actuation is introduced. The sensor consists of a bulk silicon proof mass electrode that moves vertically with respect to a rigid diffraction grating backplate electrode to provide interferometric detection resolution of the proof-mass displacement when illuminated with coherent light. The sensor architecture includes a monolithically integrated electrostatic actuation port that enables the application of precisely controlled broadband forces to the proof mass while the displacement is simultaneously and independently measured optically. This enables several useful features such as dynamic self-characterization and a variety of force-feedback modalities, including alteration of device dynamics in situ. These features are experimentally demonstrated with sensors that have been optoelectronically integrated into sub-cubic-millimeter volumes using an entirely surface-normal, rigid, and robust embodiment incorporating vertical cavity surface emitting lasers and integrated photodetector arrays. In addition to small form factor and high acceleration resolution, the ability to self-characterize and alter device dynamics in situ may be advantageous. This allows periodic calibration and in situ matching of sensor dynamics among an array of accelerometers or seismometers configured in a network.

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Section: Resultsmentioning

confidence: 99%

Micromachined Accelerometers With Optical Interferometric Read-Out and Integrated Electrostatic Actuation

Hall

Okandan

Littrell

et al. 2008

J. Microelectromech. Syst.

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show abstract

“…Thin film packaging is a less mature technology but is promising as it provides a low profile package with the lowest footprint. In most previous works, thin film encapsulation was based on sacrificial layer processes (Guckel et al 1984;Ikeda et al 1990;Lebovitz et al 1995;Cohen et al 1996;Bartek et al 1997;Lin et al 1998;Tsuchiya et al 2001;Candler et al 2003;He and Kim 2005;Stark and Najafi 2004;O'Mahony et al 2009;Gillot et al 2005;Monajemi et al 2006). For most of these processes, a cap film is first deposited on a sacrificial layer, then this sacrificial layer is etched through access holes or pores made in the cap film or the sacrificial layer is thermally decomposed, and finally the holes are sealed by a conformal film deposition.…”

Section: Introductionmentioning

confidence: 99%

MEMS packaging process by film transfer using an anti-adhesive layer

et al. 2010

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A low cost and low temperature thin film packaging process based on the transfer of an electroplated Nickel 3D cap is proposed. This process is based on adhesion control of a thick molded cap Ni film on the carrier wafer by using a plasma deposited fluorocarbon film, on mechanical debonding and on adhesive bonding of the microcaps on the host wafer with BCB sealing rings. Mechanical characterizations show that the transferred microcaps have a high stiffness, a low stress and a high adhesion. Because this process is simple and only involves a low temperature (250°C) heating of the host wafer, it is highly versatile and suitable for the encapsulation of micro and nano devices, circuits and systems elaborated on a large range of substrate materials.

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“…The reported technologies include: wafer bonding based on anodic bonding technique [17,18] and metal solder as bonding interface [19,20], and wafer level encapsulation based on poly-Si layer [21] and metal layer [22]. These papers point out that we can create a wafer level vacuum packaging for electrostatic MEMS energy harvesters such that the air damping effect can be significantly removed.…”

Section: Introductionmentioning

confidence: 99%