Wafer hot spot identification through advanced photomask characterization techniques

EUV mask patterning process to enable opaque SRAFS for bright field EUV mask imaging

“…Figure 5 describes the clear and dark resolution of this new process with the clear feature size on the horizontal and dark size on the vertical. As in past mask-wafer development projects, here, we co-optimize the mask and wafer processes to meet the wafer process objective [4][5] [6]. In this case, we apply a proprietary mask process correction (MPC) algorithm to the data to enhance the effective process resolution, and reduce the linearity errors.…”