Wafer-fused VECSELs emitting in the 1310nm waveband

Abstract

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga)As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.

Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband

“…The difference in energy of pump photons and emitted photons, non-radiative recombination and absorption of pump light outside the active region produce heating of the gain mirrors that needs to be extracted by appropriate heat-spreading schemes. As in other types of gain mirrors, the heat generated in 1300 nm wafer-fused gain mirrors may be quite efficiently dissipated either via intra-cavity diamond heat-spreaders [6,7], or in the flip-chip (thin disc) heat dissipation scheme [8,9]. So far, the maximum output power levels of 1300 nm VECSELs reached 6.6 W using the intra-cavity diamond heat-dissipation configuration with a 300 µm pump spot [6] and, very recently, 6.1W with the flip-chip heat dissipation configuration with a 400 µm pump spot [9].…”