Wafer Cleaning, Etching, and Texturization

Stapf, André; Gondek, Christoph; Kroke, Edwin; Roewer, Gerhard

doi:10.1007/978-3-662-52735-1_17-1

Cited by 4 publications

(3 citation statements)

References 64 publications

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“…The random inverted pyramidal texture shows a significant decrease of the reflected incoming light. As it was already shown by simulations, this structure has better properties with regard to light trapping efficiency compared to the conventional random pyramid structures generated by KOH‐IPA‐solutions .…”

Section: Resultssupporting

confidence: 54%

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures

Stapf

Nattrodt

Gondek

et al. 2017

Physica Status Solidi (a)

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Solutions for the wet chemical treatment of silicon wafer surfaces were investigated using mixtures which are based on hydrofluoric acid (HF), hydrochloric acid (HCl), and chlorine (Cl 2 ). We used a DoE-test plan (Design of Experiments) to evaluate the effects of five selected parameters: concentrations of HF and HCl, gas flow rate of Cl 2 , stirring, and saw type of the wafer material. High etch rates of up to 0.63 mm min À1 were observed at room temperature, which are comparable to the etch rates of KOH-IPA solutions. The silicon surface was investigated by reflectivity measurements and scanning electron microscopy (SEM), indicating pyramidal textured and polished surfaces for diamond wireand SiC-slurry-sawn wafers. Using an optimized parameter set, random inverted pyramidal surface structures are formed. These random inverted structures show a significant increase in light absorption compared to standard random upright pyramid textures, for example produced by KOH-IPA solutions.

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Section: Resultssupporting

confidence: 54%

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures

Stapf

Nattrodt

Gondek

et al. 2017

Physica Status Solidi (a)

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“…Recently, it was discovered that solutions based on hydrogen peroxide (H 2 O 2 ) only exhibit very minimal etch rates of 0.06 nm, even at extremely high H 2 O 2 and HF concentrations. [25,26] In our previous publication, [27] we utilized a different chemical etchant compared to the one used in our current submission. The objective of our research was to reduce the surface reflectivity of mc-Si wafers through chemical etching, specifically for solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

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This study proposes a method to enhance the efficiency and optical properties of silicon solar cells made from as‐cut boron‐doped p‐type multicrystalline silicon (mi‐Si) wafers through acid‐based chemical texturization. Achieving lower reflectance is crucial for improving solar cell efficiency, and this can be attained through optimized chemical etching. The research demonstrates achieving a reflectance below 2% on the wafer surface after optimal chemical etching. Wet chemical etching is employed as the surface treatment method, using the same chemical etchant with varying conditions for the texturing process. The study compares temperature‐maintained chemical etching and without temperature maintenance. The chemicals used include HF + HNO3 + CH3COOH at temperatures of 50 °C and room temperature, with etching durations of 2, 5, 10, and 15 minutes, respectively. The as‐cut boron‐doped p‐type mc‐Si wafer grains are analyzed using UV‐vis spectroscopy, optical microscopy, Fourier transform infrared spectroscopy, thickness profilometry, scanning electron microscopy, and X‐ray diffraction spectroscopy, both before and after etching. Among the different conditions tested, the chemical etchant HF + HNO3 + CH3COOH at 50 °C for a 5‐minute etching duration yields favorable results, with reflectivity below 2%. The orientation of mc‐silicon wafer grains is determined using X‐ray diffraction spectroscopy.

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Effect of nickel doping on the spectral sensitivity of silicon solar cells

Zikrillayev,

Kenzhaev,

Ismailov

et al. 2023

E3S Web Conf.

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In the modern industrial production of solar cells (SC), there is a growing trend to utilize “solar silicon” as the base material due to its cost-effectiveness. However, solar silicon possesses a drawback - it has a shorter lifetime of minority charge carriers (MCC), making it challenging to achieve high efficiency in solar cells. To address this limitation and improve the efficiency of solar cells based on “solar silicon,” two key objectives need to be met. Firstly, it is essential to increase the lifetime of photogenerated charge carriers. Secondly, there is a need to minimize both optical and electrical energy losses. To achieve an increase in the lifetime of minority charge carriers in SCs, a process called gettering can be employed. This process involves utilizing clusters of nickel atoms to trap uncontrolled impurity atoms. The paper presents the results of a study on the additional doping of silicon solar cells with nickel atoms, for factors affecting the long-wave and short-wave efficiency. Nickel doping has been shown to increase the efficiency of solar cells. It is determined that in the visible region of the spectrum the spectral sensitivity of a silicon solar cell doped with nickel is higher up to 25÷35% due to a decrease in surface recombination. Technological recommendations for nickel doping of single-crystal silicon solar cells are proposed to be combined without significant changes with the standard technological process for manufacturing solar cells.

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Wafer Cleaning, Etching, and Texturization

Cited by 4 publications

References 64 publications

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Effect of nickel doping on the spectral sensitivity of silicon solar cells

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Wafer Cleaning, Etching, and Texturization

Cited by 4 publications

References 64 publications

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl2 mixtures: Parameter influences on etch rates and surface structures

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl2 mixtures: Parameter influences on etch rates and surface structures

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Effect of nickel doping on the spectral sensitivity of silicon solar cells

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Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures

Etching SiC‐slurry and diamond wire‐sawn silicon wafers with HF‐HCl‐Cl₂ mixtures: Parameter influences on etch rates and surface structures