Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

Mu, Fengwen; Yang, Xu; Shin, Seunghyup; Wang, Yinghui; Xu, Hongle; Shang, Haiping; Sun, Yechao; Yue, Liang; Tsuyuki, Tatsurou; Suga, Tadatomo; Wang, Weibing; Chen, Dapeng

doi:10.3390/mi10100635

Cited by 4 publications

(3 citation statements)

References 30 publications

(46 reference statements)

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“…6d. Compared to SiC bonding sample with intermediate layers, such as spin-on-glass, SiO 2 , Si 3 N 4 , AlN, etc, or a conductive layer, such as Fe, Ni, Si, etc., [24][25][26][27][28][29][30] almost all-SiC bonding interface can greatly increase the bonding strength, and reduce the thermal stress of the bonding sample and improve the corrosion resistance.…”

Section: Discussionmentioning

confidence: 99%

“…According to the reported literature, the intermediate layer could be an insulating layer, such as spin-on-glass, SiO 2 , Si 3 N 4 , AlN, etc, or a conductive layer, such as Fe, Ni, Si, etc. [24][25][26][27][28][29][30] Two SiC wafers could be easily bonded together using the above method, but the sensors' temperature performance was degraded due to the mismatches in coefficients of thermal expansion between intermediate layer and SiC. 31,32 Meanwhile, the SiC-SiC bond strength decreased by introducing the intermediate and even debonded in extreme environments.…”

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confidence: 99%

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Interface Characterization and Analysis of 4H-SiC Direct Bonding Structure Based on Plasma Processing

Li¹,

Liang²,

Cheng³

et al. 2021

ECS J. Solid State Sci. Technol.

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A plasma-assisted direct bonding method for 4H-SiC is put forward to prepare all-SiC vacuum-sealed cavity in this paper. This method takes three significant steps of bonding surface treatment, hydrophilic pre-bonding and hot pressing bonding. The SiC bonded sample with a cylindrical sealing cavity structure was prepared under a pressure of 2 MPa for a period of 1 h at 1000 °C using the direct bonding method. The bonded sample’s airtightness is approximately 0.1 × 10−9 pa·m3 s−1, and the bonding strength reaches 24.9 MPa, meeting the requirements of most pressure sensors. The cavity structure of the bonded sample is unbroken and the bonding interface is smooth without stress concentration under a scanning electron microscope (SEM). Transmission electron microscope (TEM) observation results reveal that bonding interface is amorphous with a thickness of less than 1 nm. The bonding interface is mainly composed of carbon and silicon which is analyzed through energy dispersive X-ray (EDX). It is speculated that the transition layer of ultrathin amorphous SiC is formed during bonding process. Finally, the SiC bonding mechanism is discussed in detail based on the experimental results. All-SiC bonding structures with a vacuum-sealed cavity can be applied to fabricate mechanical quantity sensors for use in severe environment.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Interface Characterization and Analysis of 4H-SiC Direct Bonding Structure Based on Plasma Processing

Li¹,

Liang²,

Cheng³

et al. 2021

ECS J. Solid State Sci. Technol.

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show abstract

“…One of the most effective methods is to use the heat dissipation substrates to remove the heat in time. SiC is used for heat dissipation substrates for GaN due to its high thermal conductivity and small lattice mismatch with GaN [ 13 , 105 , 106 , 107 , 108 , 109 ]. Unfortunately, the existence of the thermal boundary conductance (TBC) between GaN and SiC limits heat transport, making significant errors in theoretical calculations and experiments [ 110 , 111 ].…”

Section: Heterogeneous Bonding For Wide-bandgap Semiconductors Thin-film Transfer Onto Sic or Diamond Substrates For High Heat Dissipatiomentioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Zhao,

Guan

et al. 2024

Applied Surface Science

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Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

Cited by 4 publications

References 30 publications

Interface Characterization and Analysis of 4H-SiC Direct Bonding Structure Based on Plasma Processing

Interface Characterization and Analysis of 4H-SiC Direct Bonding Structure Based on Plasma Processing

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

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