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Development of chemically assisted dry etching methods for magnetic device structures

“…[1][2][3][4][5][6][7][8][9] The component materials within these multilayers may include NiFe, NiFeCo ͓both are used for structures based on the giant magnetoresistance ͑GMR͒ effect͔, NiMnSb ͑a Heusler alloy potentially useful in advanced spin-valve structures͒ or the collossal magnetoresistance ͑CMR͒ materials LaCaMnO 3 , LaSrMnO 3 , and PrBaCaMnO 3 . [14][15][16] Both inductively coupled plasma ͑ICP͒ and electron cyclotron resonance ͑ECR͒ systems have proven capable of providing the necessary ion-to-reactive-neutral ratio ͑Ͼ0.02͒. 12,13 Practical etch rates may be achieved under high density plasma ͑HDP͒ conditions, where the high ion flux is able to promote desorption of halogenated etch products.…”

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

“…[44,45]). Bromine and iodine also lead to the formation of volatile oxygen reaction products such as IO 2 and BrO 2 [34]. The detrimental influence of IBr and BI 3 chemistries presented in Fig.…”

“…The interest in these unusual plasma chemistries essentially results from their expected high dissociation degrees (i.e. high reactive neutral density), even at very moderate power levels [34]. Previous investigations in IBr-and BI 3 -containing plasmas include etching of III-nitrides [35,36], III-Vs [37][38][39], and magnetic materials [40,41].…”

A comparative study of elastic scattering of low-energy electrons by boron, aluminum and gallium trihalides

“…It has been pointed out that boron-halogen compounds play an important role as reaction precursors in discharge environments. [19][20][21][22] The present study is motivated by the increasing interest in plasma applications of the boron trihalides and also to extend previous studies to include aluminum and gallium halogen compounds.…”