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Imai, Yoji; Watanabe, Akio; Shimono, Isao

doi:10.1023/a:1022301907161

Cited by 52 publications

(22 citation statements)

References 19 publications

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“…The conduction band of undoped ZnO is mainly composed of O 2p and Zn 2s states. The results above are in good agreement with other reports [30,31].…”

Section: The Total Density Of States (Tdos) Of Undoped Zno and The Pasupporting

confidence: 93%

Realization of p-Type Conductivity in ZnO via Potassium Doping

et al. 2016

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Our work focuses on the study of the electronic structure of undoped and K-doped ZnO using density functional theory as implemented in the Wien2k package. Generalized gradient approximation and GGA plus Tran-Blahamodified Becke-Johnson (TB-mBJ) were used to calculate the exchange-correlation energy. From the electronic properties, ZnO has a direct band gap in (Γ − Γ ) direction with a value of 0.76 eV within GGA and 2.63 eV within GGA + TB-mBJ. For the K-doped ZnO (12.5%) the gap was found to be 1.15 eV within GGA and 3.28 eV within GGA + TB-mBJ, we have observed that an emersion of a new narrow band exists in the valence band which is mainly caused by K 3p states with a little Zn 4s and Zn 3d effect.

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“…The conduction band of undoped ZnO is mainly composed of O 2p and Zn 2s states. The results above are in good agreement with other reports [30,31].…”

Section: The Total Density Of States (Tdos) Of Undoped Zno and The Pasupporting

confidence: 93%

Realization of p-Type Conductivity in ZnO via Potassium Doping

et al. 2016

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“…In this region, we can also predict hybridization between Al-3s and 3p orbitals as illustrated in the partial density of states of Al.This can be concluded for Ga-4s and In-5s doped ZnO too. These donor states can be the origin of the increasing electrical conductivity as cited in the case of Ga doped ZnO[44].…”

mentioning

confidence: 79%

Comparative first principles study of ZnO doped with group III elements

Khuili¹,

Fazouan²,

Makarim

et al. 2016

Journal of Alloys and Compounds

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“…These films are the same as those shown in figure 16. The solid straight lines are least-squares fits to equation (10). The inset in (a) depicts a schematic for the Hall-bar-shaped sample.…”

Section: Hall Transportmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Cited by 52 publications

References 19 publications

Realization of p-Type Conductivity in ZnO via Potassium Doping

Realization of p-Type Conductivity in ZnO via Potassium Doping

Comparative first principles study of ZnO doped with group III elements

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

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