Realization of p-Type Conductivity in ZnO via Potassium Doping

Abstract

Our work focuses on the study of the electronic structure of undoped and K-doped ZnO using density functional theory as implemented in the Wien2k package. Generalized gradient approximation and GGA plus Tran-Blahamodified Becke-Johnson (TB-mBJ) were used to calculate the exchange-correlation energy. From the electronic properties, ZnO has a direct band gap in (Γ − Γ ) direction with a value of 0.76 eV within GGA and 2.63 eV within GGA + TB-mBJ. For the K-doped ZnO (12.5%) the gap was found to be 1.15 eV within GGA and 3.28 eV within GGA + TB-mBJ, we have observed that an emersion of a new narrow band exists in the valence band which is mainly caused by K 3p states with a little Zn 4s and Zn 3d effect.

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

“…For the K element doping, due to its larger atomic size, it is expected that the amount of interstitial K is suppressed and a p-type ZnO:K has been achieved with the introduction of the K dopant. [129,130] It has been pointed out that the group Ib elements also play roles as acceptors in ZnO. [98,124] A p-type ZnO has been realized with Ag doping.…”

Structural, Morphological, Optical, and Electrical Properties of Sol–Gel Derived Sb‐Doped ZnO Thin Films Annealed Under Different Atmospheres

“…Many endeavored research works have been recently conducted for achieving ZnO with p‐type conductivity by doping ZnO with group I and versus elements such as Li, Na, K, N, P, As, and antimony (Sb). [ 8–14 ] Sb is among potential candidates to achieve p‐type ZnO because of a relatively heavy element compared with zinc and oxygen and good acceptor behavior. [ 15 ] It has been reported that p‐type conductivity in Sb‐doped ZnO can be achieved by Sb substitution at Zn site resulting chemical bonding with two zinc vacancies (Sb Zn –2V Zn ), then forming acceptor complex in ZnO.…”