W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology

Thome, Fabian; Ture, Erdin; Brückner, Peter; Quay, R.; Ambacher, O.

doi:10.23919/gemic.2018.8335097

Cited by 23 publications

(9 citation statements)

References 10 publications

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“…In the past, state-of-the-art single-pole double-throw (SPDT) switches, operating at mmW frequencies, were demonstrated using the well-known quarter-wave transformation shunt switch approach. Best results exhibit an IL as low as 1.1 dB utilizing gallium arsenide (GaAs) Schottky diodes or highelectron-mobility transistors (HEMTs) [3], [4], respectively. However, for the former, a monolithic integration with amplifiers seems hardly possible, and for the latter, the ISO is only about 20 dB.…”

Section: Introductionmentioning

confidence: 99%

Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology

Thome

Leuther

Ambacher

2020

IEEE Microw. Wireless Compon. Lett.

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This letter presents the design and performance of two single-pole double-throw (SPDT) switches operating in V -band (50-75 GHz) and W -band (75-110 GHz). The millimeterwave (mmW) integrated circuits (MMICs) are fabricated in a 50-nm gate-length metamorphic high-electron-mobility transistor technology. Special attention was paid to the reduction of the insertion loss (IL). Thus, both switch MMICs achieve an IL of 1-1.6 dB (average 1.2 dB), covering the entire V -band and W -band, respectively. The isolation (ISO) of the switches is better than 31.6 and 28.5 dB, respectively. The input power for 1 dB of IL compression is at least 22 and 19 dBm, respectively. A wafer mapping of both circuits exhibits a high yield and low spread of IL and ISO. Based on the given results, the presented SPDT switch MMICs demonstrates state-of-the-art performance.

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Section: Introductionmentioning

confidence: 99%

Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology

Thome

Leuther

Ambacher

2020

IEEE Microw. Wireless Compon. Lett.

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“…Therefore, the implement of the BLE should be based on the standard Complementary Metal-Oxide-Semiconductor (CMOS) process, which is commonly used for a low-cost solution. Several approaches have been proposed and the implemented SPDT switch has high performance for the transceiver system [12][13][14][15][16]. Most radio-frequency (RF) SPDT switches use the Gallium Arsenide (GaAs) process to implement the circuit because of the high on-state resistance and low off-state capacitance of the GaAs transistor.…”

Section: Introductionmentioning

confidence: 99%

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

et al. 2018

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In the IoT/wearable devices, the antenna is shared with the receiver and transmitter of the transceiver. This requires the control of the switch between the antenna and the control circuitry to achieve both low insertion loss and high isolation. This paper presents a low insertion loss and high isolation switch based on Single Pole Double Throw (SPDT) switch for 2.4 GHz Bluetooth low power (BLE) transceiver. The body-floating technique is used to improve the insertion loss’s performance. An ultra-small on-chip matching network with high Q-factor is proposed. The shunt transistors are used as active shunt capacitors that create the active matching network to improve isolation characteristics. The proposed SDPT switch was designed using 55 nm CMOS process with the total area of 110 μm × 210 μm. The insertion loss and isolation characteristics of the proposed SPDT switch observed at 2.4 GHz are 1.85 dB and 40 dB, respectively.

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“…However its isolation is very low, over 9 dB in whole band. In [34] isolation was improved to values comparable with SiGe. Semiconductor die image of this λ/4 shunt switch is shown in fig.…”

Section: Gan Hemtmentioning

confidence: 99%

“…Another semiconductor material used for mm-wave switching is a GaN [33][34][35]. It offers high bandgap and high thermal conductivity which makes it suitable for high power density devices.…”

Section: Gan Hemtmentioning

confidence: 99%