Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology

Thome, Fabian; Leuther, A.; Ambacher, O.

doi:10.1109/lmwc.2019.2958209

Cited by 19 publications

(7 citation statements)

References 10 publications

(8 reference statements)

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“…This construction also allows to optimize performance of the transistors by changing indium concentration in the channel [39]. There are multiple examples of the InGaAs mHEMT based switches for mm-wave frequency range [40][41][42][43][44][45][46][47]. Most of them are based on typical λ/4 shunt topology (fig.…”

Section: Ingaas Mhemtmentioning

confidence: 99%

State of the Art Sub-Terahertz Switching Solutions

Sobolewski

Yashchyshyn

2022

IEEE Access

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Section: Ingaas Mhemtmentioning

confidence: 99%

State of the Art Sub-Terahertz Switching Solutions

Sobolewski

Yashchyshyn

2022

IEEE Access

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“…Various methods are developed to give amplification in the output side of photo-detector which is attained with the use of LNA. The three stages LNA have ability towards deliver better optimal power transmission as of the received side signal generated in photo-detector related on load impedance in frequency range [15]. The LNA design with narrowband should allow for a best tradeoff among increasing of gain level and decreasing noise level in received side it works under larger frequency also.…”

Section: Design Of Lna Amplifier For MM Wavementioning

confidence: 99%

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

2021

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In today’s world, radio receiver system is a prevailing wireless technology in that the major part is Low Noise Amplifier (LNA) which widely used to improve weak signals in many applications with millimeter and radio frequency waves such as optical communication, multimode transceivers and measurement instrumentations. The real drawbacks of LNA is that it fails to maintain specific properties in critical conditions like as minimum power consumption, provide low noise figure, input matching and linearity. Additionally, promoted by various application demands, design methods and control methods must require to improve performance of LNA. The performance of LNA can be improved by adding extra components in basic circuit by proper arrangement for millimeter and radio frequency waves. The review paper provides information about design methodology, optimization techniques and control techniques. The different design of LNA is reviewed and analyzed such as 3-stage near-mm Wave LNA, 5-stage near-mm Wave LNA, common-gate amplifier, shunt-feedback amplifier, Resistor-terminated common-source amplifier, Traditional inductor-less amplifiers, cascode connection and double common source. This review paper also provides the information about design circuit diagram. The performance improvement of LNA can be achieved with the help of different techniques and our review based on optimization and control techniques with parameter tuning. Finally, the direction for the future study is presented based on review analysis of LNA.

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“…[19][20][21][22] The TL-based switch is well adapted to high-frequency bands with low IL and reasonable isolation, while it occupies a large chip area at mm-wave frequency. 23,24 Compared with other types of SPDT switches, transformer-based T/R has a great advantage in high isolation with compact chip size for the mm-wave band. [25][26][27][28] The isolation of the transformer-based switch is limited because of the contradiction with the IL performance.…”

Section: Introductionmentioning

confidence: 99%

Design of high‐isolation and low‐loss single pole double throw switch based on the triple‐coupled transformer for ultra‐wideband phased array systems

Wang

Wang³

et al. 2021

Circuit Theory & Apps

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This paper proposes a single pole double throw (SPDT) switch based on the triple-coupled transformer. The triple-coupled transformer utilizes a novel structure with three stacked coupled inductors which are placed in nonconcentric positions to ensure the isolation of SPDT switch. The SPDT switch obtains additional optimization space to improve insertion loss performance under the premise of reassuring isolation. The equivalent circuit model is built to interpret the mechanism of the SPDT switch and transformer. The proposed switch is implemented with the 65-nm CMOS process, the simulated results show the isolation between input-to-output ports are better than 25 dB at 24-38 GHz. The proposed SPDT switch achieves a minimum insertion loss of 1.56 dB with compact chip size 625 Â 370 μm 2 (with PADs).

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Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology

Cited by 19 publications

References 10 publications

State of the Art Sub-Terahertz Switching Solutions

State of the Art Sub-Terahertz Switching Solutions

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

Design of high‐isolation and low‐loss single pole double throw switch based on the triple‐coupled transformer for ultra‐wideband phased array systems

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