W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

Thome, Fabian; Leuther, A.; Heinz, Felix; Ambacher, O.

doi:10.1109/mwsym.2019.8700792

Cited by 19 publications

(7 citation statements)

References 6 publications

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“…Furthermore, a comparison of two mHEMT W -band LNAs with 50-and 35-nm gate length showed no significant improvement in noise temperature but revealed a much stronger bias dependence of the small-signal gain and the noise temperature of the 50-nm mHEMT LNA both at room [13], [14] and cryogenic temperature [15]. Understanding (cryogenic) noise mechanisms is a key to further optimize current InGaAs HEMT technologies for low noise figure.…”

Section: Introductionmentioning

confidence: 99%

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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This article reports on the investigation and optimization of cryogenic noise mechanisms in InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with a gate length of 100, 50, and 35 nm are characterized both under room temperature and cryogenic conditions. Furthermore, two additional technology variations with 50-nm gate length are investigated to decompose different noise mechanisms in HEMTs. Therefore, cryogenic extended K u-band low-noise amplifiers of the investigated technologies are presented to benchmark their noise performance. Technology C with a 50-nm gate length exhibits an average effective noise temperature of 4.2 K between 8 and 18 GHz with a minimum of 3.3 K when the amplifier is cooled to 10 K. The amplifier provides an average gain of 39.4 dB at optimal noise bias. The improved noise performance has been achieved by optimization of the epitaxial structure of the 50-nm technology, which leads to low gate leakage currents and high gain at low drain current bias. To the best of the authors' knowledge, this is the first time that an average noise temperature of 4.2 K has been demonstrated in the K u-band.

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Section: Introductionmentioning

confidence: 99%

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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“…Once again, port 4 is terminated on the reference impedance (50 Ω) and the two incoming signals are cancelled since they are practically out phased by 180°. An example of balanced mmw-LNAs operating at W-band is reported in [16] and [17]. It is interesting to note that the two realizations only have the circuit topology in common.…”

Section: Balancedmentioning

confidence: 99%

“…It is interesting to note that the two realizations only have the circuit topology in common. In fact, while [16] is a three-stage circuit realized in microstrip InP technology, [17] is a four-stage realized on GaAs substrate in coplanar-waveguide.…”

Section: Balancedmentioning

confidence: 99%

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

et al. 2019

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An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59-66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.2 of 18 performance at least up to 300 GHz. Few technologies are capable of fulfilling such requirement and even less are industrial-grade ones. Most are available in research labs, and some, typically the ones originating in the USA, may be subject to export restriction or end user certification.Current state-of-the-art mmw-LNA are realized either in indium phosphide (InP) high electron mobility transistor (HEMT) or gallium arsenide (GaAs) metamorphic HEMT (mHEMT) with gate lengths shorter than 100 nm. The latter parameter represents, nowadays, a "threshold" value for millimeter-wave operation. In fact, the great majority of mmw-LNAs analyzed in this review are realized featuring a gate length equal or shorter than 100 nm.HEMT is in hetero-structure transistor where a two-dimensional electron gas (2DEG) is created at the interface of two different contacting material due to their different energy bandgaps. Such 2DEG present very high electron saturation velocity and is well suited for high-frequency and low-noise applications.In the following, the main features of each technology and how each one can be gainfully employed to achieve low-noise performance are briefly described. Akgiray et al. provide a recent and detailed analysis of technologies for ultra-low-noise applications for operation at millimeter-wave and the relative transistor noise model in [3]. Indium PhosphideInP HEMT transistors have long been the semiconductor of choice for extremely low-noise amplifiers operating in RF, microwave, and millimeter-wave bands due to their superior noise and gain performance up to 300 GHz and even above. Significantly developed in the 1990s, InP HEMT monolithic microwave integrated circuits (MMICs) can be found in both defense applications (such as secure communications) and scientific applications, which typically consist of some form of very high-frequency radiometry, capable of detecting the vanishing small signals travelling from outer space. On the other hand, among all semiconductors, InP experiences slow development due to its niche market and, consequently, tends to be one of the mos...

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“…However, the absolute state of the art over all semiconductor technologies is still demonstrated by InGaAs-based HEMTs with an average NF over the entire W -band of 1.9 dB [8], [9]. When thinking about system applications, one might also consider other circuit topologies, e.g., distributed amplifiers, that have reported in W -band an appealing combination of an average NF of 3.6 dB and an output-referred 1-dB compression point (OP 1 dB ) in the range of 7.4-8.4 dBm.…”

Section: Introductionmentioning

confidence: 99%

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

Thome

Brückner

Quay

2022

IEEE Trans. Microwave Theory Techn.

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This article reports on a gallium-nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz. The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. To the best of the authors' knowledge, this MMIC demonstrates the lowest NF among GaN LNAs at E/W-band frequencies.

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W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

Cited by 19 publications

References 6 publications

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

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